2010
DOI: 10.1021/am100127q
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Control over Multifunctionality in Optoelectronic Device Based on Organic Phototransistor

Abstract: Highly stable, reproducible, photosensitive organic field-effect transistors based on an n-type organic material, copper hexadecafluorophthalocyanine, and two different polymeric gate dielectrics has been reported and their performances have been compared by evaluating the surface/interface properties. The devices produced a maximum photocurrent gain (I(light)/I(dark)) of 79 at V(G) = 7 V and showed the potentiality as multifunctional optoelectronic switching applications depending upon the external pulses. Th… Show more

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Cited by 64 publications
(57 citation statements)
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“…Especially in organic phototransistors, PMMA layers as gate insulators do not trap charges at the PMMA/organic semiconductor interfaces, because the molecular structure of PMMA lacks charge-trapping sites such as hydroxyl groups. [42][43][44] Thus, in the devices that did not have NT-CN films, I D immediately increased at the start of the light illumination due to photo-induced EHP in the pentacene layer, and remained constant during illumination because the trapping phenomenon was absent ( Figure S7c, Supporting Information). [44] When the light was turned off, I D instantly returned to its initial state; this is the same behavior in the CNUVS after exposure to R, G, and B light sources.…”
Section: Doi: 101002/adma201906899mentioning
confidence: 99%
“…Especially in organic phototransistors, PMMA layers as gate insulators do not trap charges at the PMMA/organic semiconductor interfaces, because the molecular structure of PMMA lacks charge-trapping sites such as hydroxyl groups. [42][43][44] Thus, in the devices that did not have NT-CN films, I D immediately increased at the start of the light illumination due to photo-induced EHP in the pentacene layer, and remained constant during illumination because the trapping phenomenon was absent ( Figure S7c, Supporting Information). [44] When the light was turned off, I D instantly returned to its initial state; this is the same behavior in the CNUVS after exposure to R, G, and B light sources.…”
Section: Doi: 101002/adma201906899mentioning
confidence: 99%
“…The R value was very low, around 1.5 mA W −1 . However, a fast switching speed below 10 ms was achieved [77, 78]. In this study, a poly(4-phenoxy methylstyrene) (P4PMS) was employed as a gate insulating layer.…”
Section: Light-receiving Ofetsmentioning
confidence: 99%
“…[7][8][9] Meanwhile, organic photodiodes and phototransistors are drawing more and more research interests for their potential applications in light detection and signal magnification. [10][11][12][13][14][15][16][17][18] However, organic photoconductor, an equally important device for light detection, has not been extensively studied because it is very hard to improve its photocurrent. 19,20 The above-mentioned large binding energy seriously prevents exciton dissociation and promotes carrier recombination, 21,22 resulting in very small photocurrent in conventional lateral single-layer-single-material long-channel based photoconductors.…”
mentioning
confidence: 99%