Control over Berry Curvature Dipole with Electric Field in 
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Ye, Xingguo; Liu, Huiying; Zhu, Pengfei; Xu, Wen-Zheng; Yang, Shengyuan A.; Shang, Nianze; Liu, Kaihui; Liao, Zhi-Min

doi:10.1103/physrevlett.130.016301

Cited by 18 publications

(11 citation statements)

References 46 publications

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“…7,9 Under an in-plane current excitation, BCP is responsible for an electric field-driven BCD, thereby contributing to the emergence of THE signal. 11 Being induced by the band geometry, the magnitude of BCD is significantly enhanced in tilted band anticrossings and band inversions. 3 Hence the phenomenon was experimentally reported in Weyl semimetals, such as MoTe 2 , WTe 2 , and TaIrTe 4 .…”

Section: ■ Introductionmentioning

confidence: 99%

“…Unlike the necessity of broken time-reversal symmetry for the ordinary Hall effect, NLHE rises from intrinsic band geometry, Berry curvature dipole (BCD). , Conventionally, NLHE manifests as a second-order transverse voltage ( V ⊥ 2ω ) response to a longitudinal a.c. current ( I ω ) in systems with broken inversion symmetry . This phenomenon exhibits potential applications in recognizing the band geometry and current rectification. − Recent works extended the study to third-order nonlinear Hall effect (THE) in nonmagnetic systems with preserved inversion symmetry, where both linear and second-order Hall responses are suppressed. − The origination is intricately connected with another band geometry quantity, known as Berry connection polarizability (BCP). , Under an in-plane current excitation, BCP is responsible for an electric field-driven BCD, thereby contributing to the emergence of THE signal . Being induced by the band geometry, the magnitude of BCD is significantly enhanced in tilted band anticrossings and band inversions .…”

Section: Introductionmentioning

confidence: 99%

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Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Li,

Wang,

Yang

et al. 2024

ACS Appl. Mater. Interfaces

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The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS) 1.17 (NbS 2 ) 3 . While the THE is prohibited in individual NbS 2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Li,

Wang,

Yang

et al. 2024

ACS Appl. Mater. Interfaces

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“…An advantage of the NLH rectification is the absence of thermal losses, since it originates from the Berry curvature dipole. The latter can be in principle controlled by electric field, which has been demonstrated [27] for twodimensional WTe2.…”

mentioning

confidence: 95%

Gate-Dependent Nonlinear Hall Effect at Room Temperature in Topological Semimetal GeTe

Орлова¹,

Timonina²,

Kolesnikov³

et al. 2023

Chinese Phys. Lett.

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We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO2 substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification.

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“…1–7 The topological transport properties of asymmetric systems are crucial for understanding the condensed matter characteristics of topological materials. 8–14 Recent studies have explored the Berry curvature dipole, 15 spin Hall conductivity (SHC), 16,17 and other exotic topological properties in locally asymmetric systems. In many time-reversal systems, the phase transition of the SHC is also a focus of attention.…”

Section: Introductionmentioning

confidence: 99%

Evolution of local edge state braiding and spin topological transport characterization of Te-doped monolayer 1T′-MoS₂

Cheng,

Yan,

Song

et al. 2023

Phys. Chem. Chem. Phys.

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Control over Berry Curvature Dipole with Electric Field in WTe2

Cited by 18 publications

References 46 publications

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Gate-Dependent Nonlinear Hall Effect at Room Temperature in Topological Semimetal GeTe

Evolution of local edge state braiding and spin topological transport characterization of Te-doped monolayer 1T′-MoS₂

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Control over Berry Curvature Dipole with Electric Field in WTe2

Cited by 18 publications

References 46 publications

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)1.17(NbS2)3

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)1.17(NbS2)3

Gate-Dependent Nonlinear Hall Effect at Room Temperature in Topological Semimetal GeTe

Evolution of local edge state braiding and spin topological transport characterization of Te-doped monolayer 1T′-MoS2

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Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS)_1.17(NbS₂)₃

Evolution of local edge state braiding and spin topological transport characterization of Te-doped monolayer 1T′-MoS₂