1997
DOI: 10.1006/jssc.1997.7296
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Control on the Copper Valence and Properties by Oxygen Content Adjustment in the LaCuO3−System (0≤y≤0.5)

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Cited by 29 publications
(21 citation statements)
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References 43 publications
(44 reference statements)
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“…Comparing the oxygen vacancy formation energies with respect to undoped SmCoO 3 (2.08 eV), Co-site doping with B does not markedly lower E f , except when doped with Cu, and at x Ni 4 0.75. The calculated oxygen vacancy formation energies for Ni-and Cu-doped SmCoO 3 (Table 3, and Table S7 in ESI †) indicate -in agreement with experimental studies 15,24,26,27 that only SmNi x Co 1Àx O 3Àd and SmCu x Co 1Àx O 3Àd lead to meaningful reduction in the V O formation energy at higher dopant concentrations. As such, these systems are expected to be oxygen-deficient at IT-SOFC operating temperatures and oxygen partial pressures.…”
Section: Oxygen Vacancy Formation In Smb 1àxsupporting
confidence: 83%
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“…Comparing the oxygen vacancy formation energies with respect to undoped SmCoO 3 (2.08 eV), Co-site doping with B does not markedly lower E f , except when doped with Cu, and at x Ni 4 0.75. The calculated oxygen vacancy formation energies for Ni-and Cu-doped SmCoO 3 (Table 3, and Table S7 in ESI †) indicate -in agreement with experimental studies 15,24,26,27 that only SmNi x Co 1Àx O 3Àd and SmCu x Co 1Àx O 3Àd lead to meaningful reduction in the V O formation energy at higher dopant concentrations. As such, these systems are expected to be oxygen-deficient at IT-SOFC operating temperatures and oxygen partial pressures.…”
Section: Oxygen Vacancy Formation In Smb 1àxsupporting
confidence: 83%
“…The lack of experimental data for SmCuO 3 and SmNiO 3 meant that we could not calculate their respective phase diagrams, although it has been reported that both materials are unstable under high partial oxygen pressures. 24,26,27 As such, for ease of comparison Dm O = À0.5 eV has been used for all materials and concentrations, and we have assumed that the ensuing error for SmFeO 3 is negligible for the purpose of this discussion. 13,48 However, we have considered Dm O = 0 for SmMn 0.75 Co 0.25 O 3Àx , since its stoichiometry is closer to SmMnO 3 than it is to SmCoO 3 .…”
Section: Oxygen Vacancy Formation In Smb 1àxmentioning
confidence: 99%
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“…We chose LaCuO 3 as a strain-controlling phase because it will not poison La 2 CuO 4+δ and contains the same chemical constituents. In addition, because LaCuO 3 contains Cu 3+ , it can act as an oxidizing source to dope La 2 CuO 4+δ ( 34 ). Under the film growth conditions, LaCuO 3 will most likely be in the composition range, LaCuO 3–δ , 0 < δ < 0.5, which will make it antiferromagnetic ( 35 , 36 ).…”
Section: Introductionmentioning
confidence: 99%
“…STO was chosen as the substrate as it has a perovskite structure similar to that of 113, and so, 113 will be epitaxially stabilized on STO. 113 has a tetragonal structure ( a = 3.8189 Å; c = 3.97268 Å; unit cell volume, 57.993 Å 3 ) when it is fully oxidized ( 34 36 ). Because c is most closely matched to a of STO ( a = 3.905 Å), the films are expected to grow with the out-of-plane a axis, giving a axis–oriented 113 films ( a -113).…”
Section: Introductionmentioning
confidence: 99%