Control of the leakage current in SrTiO3 films by acceptor doping

First-principles study of bulk and surface oxygen vacancies in SrTiO3 crystal

“…Deliberate variation of oxygen content allows one to modify SrTiO 3 not only from an n-type conductor (at low oxygen partial pressure) to p-type (at high pressure) or even a superconducting state, but also from an electronic to an ionic conductor. Oxygen vacancies are also believed to be a crucial factor in trapping electrons causing the highly undesirable leakage current in microelectronic dea e-mail: v.alexandrov@fkf.mpg.de vices such as, e.g., the dynamic random access memory capacitors [4].…”

Characteristics of post-annealed SrTiO3 thin films prepared by mirror-confinement-type ECR plasma sputtering

“…From this report, we consider the formation of a Sr±O plane within the non-stoichiometric SrTi x O 32d ®lms (x , 1) as one of the causes of the observed peak shift. However, it is reported [14] that the existence of excess Sr at a condition of Sr/Ti . 1 and excess Ti at Sr/Ti , 1 induces the oxygen vacancy with two compensation electrons (V 00 O ) from the viewpoint of defect chemistry, expressed as depicted in Kro Èger±Vink notation:…”

Control of electrical leakage in magneto‐electric gallium ferrite via aliovalent substitution

“…Electrical leakage is a known problem in many dielectric, ferroelectric, or multiferroic oxides, attributed primarily to specific ionic or electronic defects or microstructural characteristics. A very useful technique to control the electrical leakage and to improve ferroelectric properties of multiferroics (or ferroelectrics) is the atomic substitution by different ions, that is, doping or co‐doping using iso‐valent and aliovalent ions such as La, Nd, Ti, or Ni and various other ions . The control of electrical leakage, consequently, is an outcome of a combination of factors such as tuning of oxygen vacancy concentration, formation of compensating defects, reduction in volatilization of volatile elements or changes in the microstructural features such as that of grains and grain boundaries or porosity or secondary phases.…”

“…A very useful technique to control the electrical leakage and to improve ferroelectric properties of multiferroics (or ferroelectrics) is the atomic substitution by different ions, that is, doping or co-doping using iso-valent and aliovalent ions such as La, Nd, Ti, or Ni and various other ions. [28][29][30][31][32][33][34][35][36][37][38][39] The control of electrical leakage, consequently, is an outcome of a combination of factors such as tuning of oxygen vacancy concentration, formation of compensating defects, reduction in volatilization of volatile elements or changes in the microstructural features such as that of grains and grain boundaries or porosity or secondary phases. Similar strategies have also been adopted for GFO, albeit to a very limited extent.…”