Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

Abstract

Amorphous single layered silica films deposited using industrially scalable roll-to-roll atmospheric pressure-plasma enhanced chemical vapor deposition were evaluated in terms of structureperformance relationships. Polarised attenuated total reflectance-Fourier transform infrared absorption spectroscopy and heavy water exposure to induce hydrogen-deuterium exchange revealed it was possible to control the film porosity simply by varying the precursor flux and plasma residence times.Denser silica network structures with fewer hydroxyl impurities, shorter Si-O bonds, decreased Si-O-Si bond angles and a greater magnitude of isolated pores were found in films deposited with decreased precursor flux and increased plasma residence times, and consequently exhibited significantly improved encapsulation performance. a FUJIFILM Manufacturing Europe B.V.,

RETRACTED: Effect of Fluoride Layer Growth on the Deposition Rate under Different Microchannel Structures

“…This is because when the molecules have a longer residence time in the weakly ionized gaseous plasma, they have more time to dissociate into useful radicals . The residence time will affect the particle breaking process, as well as the formation of new chemical bonds. , In the article by Yasuda et al, the deposition rate initially increases and then decreases with an increase in the flow rate. Such a change in the deposition rate implies that the growth mode of the film changes from the mass transfer limited regime to the surface reaction limited regime due to the residence time .…”

Nanoporous SiOx plasma polymer films as carrier for liquid‐infused surfaces

“…[55,65] Distinct changes upon etching with increasing power are seen in the LO-TO splitting of the Si-O-Si stretching vibration signal, mainly by the reduction of the TO peak intensity (1055 cm −1 ), which might be related to oxidation and hydrocarbon removal but also to an increase of porosity. [66][67][68] In agreement, the peak position of the LO peak intensity (~1210 cm −1 ) indicates a porous structure and the slight blue shift to higher wavenumbers with etching power points to increasing relaxation of the silica matrix. [66,69] Furthermore, the intensity of the band around 3200 cm −1 decreased upon plasma etching, which could be explained by secondary condensation reactions of silanols with water to form siloxane bonds agreeing with the reduced peak at 930 cm −1 .…”