Control of the Aryl Layer Growth

Breton, Tony; Gautier, Christelle

doi:10.1007/978-3-031-04398-7_5

Cited by 3 publications

(3 citation statements)

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“…The mechanism of silicon surface corrosion and activation is shown in Figure . Fluoride ions (F – ) attack the Si–H bond and release electrons (e – ), and the initiator diazonium salt combines with e – and is reduced to release nitrogen gas, and generate aromatic free radicals. ,, Aromatic radicals can initiate the polymerization of MMA monomers and generate polymer chains with terminal radicals. , On the Si surface, aromatic radicals can be covalently grafted with the Si–H surface to form an initial aromatic layer, and subsequent radicals can be grafted to the ortho position of the nitrophenyl group . Since each radical contains a nitrophenyl group at the end, the reaction can continue and the organic film keeps growing.…”

Section: Resultsmentioning

confidence: 99%

“…50,51 On the Si surface, aromatic radicals can be covalently grafted with the Si−H surface to form an initial aromatic layer, and subsequent radicals can be grafted to the ortho position of the nitrophenyl group. 52 Since each radical contains a nitrophenyl group at the end, the reaction can continue and the organic film keeps growing. The distribution of Si and C elements in the "substrate + organic dielectric film" in the cross-section is characterized by means of EDS line scan mode.…”

Section: Possible Mechanismmentioning

confidence: 99%

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Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Cao

Zheng

Xue

et al. 2022

ACS Appl. Electron. Mater.

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In the current electronics industry, chip interconnect density is continuously increasing and high-frequency communication is further developed. To effectively reduce the adverse effects such as resistance−capacitance delay and signal crosstalk, it is urgent to develop organic dielectric films with lower dielectric constants. In this study, chemical grafting method via aryl diazonium chemistry is used to deposit polymethylmethacrylate (PMMA) films on the porous Si surface. The differences in surface morphology and structure of thin films on flat silicon and porous silicon are studied. In addition, we study the effect of substrate porosity on the dielectric constant, and finally obtain porous PMMA films with dielectric constants ranging from 1.9 to 1.5. Compared with the PMMA film prepared on flat silicon, the film prepared on porous silicon has the advantages of faster growth rate, larger thickness adjustable range, stronger adhesion to the substrate, and lower dielectric constant. The dielectric constant of uniform porous PMMA films obtained in this experiment is further decreased compared with inorganic SiO 2 (ε 1 = 3.9) and dense PMMA films (ε 1 = 2.8−2.4). And the dielectric loss of PMMA films also decreases with the increase of porosity. This is a method for preparing porous polymers, which is more suitable for in situ thin film preparation in high-density electronic interconnections than traditional methods for preparing porous polymers. Theoretically, this method can be used to prepare other vinyl organic films on porous silicon surface, making it have better application prospects in the field of higher-frequency communication in the future.

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Section: Resultsmentioning

confidence: 99%

Section: Possible Mechanismmentioning

confidence: 99%

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Cao

Zheng

Xue

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…3 To overcome the disadvantages related to the lack of control of film growth, many alternatives have already been proposed. [4][5][6][7] Whether they are based on the degradation of an existing multilayer, 8,9 on the blocking of reactive positions, [10][11][12][13] on the lowering of the local concentration of the reactive group [14][15][16][17] or on the blocking of the electronic transfer through the first layer formed, [18][19][20] these methods have shown that it is possible to limit the thickness of the films formed to a near-monolayer.…”

Section: Introductionmentioning

confidence: 99%