Control of selective area growth of InP

Analysis of InP Regrowth on Deep-Etched Mesas and Structural Characterization for Buried-Heterostructure Quantum Cascade Lasers

“…In addition, deterioration of device characteristics due to dopant diffusion and intermixing of wells and barriers within the active region at high growth temperature is a fear and has to be considered as well. 22 Similarly, low growth pressure and high V/III ratio suppress deposition on the oxide, 23 and high growth rate promotes planar growth. Therefore, all regrowths were carried out at temperature of 630°C and pressure of 100 Torr with V/III ratio of 110 and growth rate of <3 Å /s in a horizontal MOCVD reactor, which have been experimentally demonstrated to be effective in planarizing selective regrowth.…”

Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

“…The higher growth temperature has a surface free of pits. Higher growth temperatures are known to enhance desorption from oxide masks in SAE of III-V materials, reducing the amount of polycrystalline growth [19]. No reduction in the amount of polycrystal deposited in the AlO x passivated area is observed for the condition investigated.…”

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

“…The pressure range under investigation is typically limited to small excursions (o100 Torr) in the low-pressure MOVPE regime [7,8]. In different studies, a completely different reactor was used to compare low pressure to atmospheric pressure results [9,10].…”