Control of preferred orientation for ZnO  films: control of self-texture

Fujimura, Norifumi; Nishihara, Tokihiro; Goto, Seiki; Xu, Jia; Itô, Taichiro

doi:10.1016/0022-0248(93)90861-p

Cited by 693 publications

(351 citation statements)

References 11 publications

Supporting

Mentioning

308

Contrasting

Unclassified

Order By: Relevance

“…TEM image shows that at a low energy density of 600 mJ/cm 2 (Fig. 3a), the orientation of the film is random with grain defects.…”

Section: Resultsmentioning

confidence: 99%

“…Recently Hosono et al [1] reported that highly uniform [0001] InGaZnO 4 (IGZO) film can be grown directly on YSZ glass substrate. It was also reported that the ZnO on glass substrate can easily be textured to [0001] [2,3]. However, the temperature of solid phase crystallization is up to 950°C which is not suitable to fabricate crystalline IGZO TFTs on glass or flexible substrate.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

Chen

Ishihara

et al. 2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…TEM image shows that at a low energy density of 600 mJ/cm 2 (Fig. 3a), the orientation of the film is random with grain defects.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

Chen

Ishihara

et al. 2011

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…Despite the fact that the effects of precursor flow ratio on the surface properties of polycrystalline ZnO have already been investigated, both for LP-MOCVD [15] and for sputtering [16], no clear explanation of how the gas flows impact morphology has been provided up to now. In order to fill this gap, we base our understanding on previous work showing that the morphology observed at the surface of LP-MOCVD ZnO results from a combination of both nucleation-and kinetic-driven phenomena [8][9][10][11][12][13][14][15][16][17].…”

Section: Discussionmentioning

confidence: 99%

“…In order to fill this gap, we base our understanding on previous work showing that the morphology observed at the surface of LP-MOCVD ZnO results from a combination of both nucleation-and kinetic-driven phenomena [8][9][10][11][12][13][14][15][16][17]. In fact, it was demonstrated that temperature induced inter-facet diffusion could lead to the selection of different crystallographic PO [8].…”

Section: Discussionmentioning

confidence: 99%

Control of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristics

Nicolay

Benkhaira

Ding

et al. 2012

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

“…The general explanation for the morphology of the ZnO nanostructures is related to the difference in the surface free energies for the main crystallographic planes of hexagonal ZnO: G 001 =-2.8102 kJ/mol, G 101 =-2.1067 kJ/mol and G 100 =-2.0013 kJ/mol, respectively. Due to this anisotropy, preferential growth on the plane of lowest energy occurs, providing the elongated ZnO structures along the c-axis [25]. However, at lowered temperature the polycrystalline film, containing grains oriented toward all above described planes can be obtained.…”

Section: Effect Of the Substrate Temperature On The Zno Microstructurementioning

confidence: 99%

Morphology engineering of ZnO nanostructures

Khranovskyy

Yakimova

2012

Physica B: Condensed Matter

View full text Add to dashboard Cite

The nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) at the temperature range 200 -500 °C at variable precursor pressure. The temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30 -45 nm at the tips. The observed growth evolution is explained in term of ZnO crystal planes free energy difference and growth kinetic. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulted in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here. PACS keywordsZnO nanostructures, APMOCVD, temperature evolution IntroductionEngineering of the crystal's morphology and microstructure has initiated great research interest. Particularly control of the shapes, size and morphology of novel or mature functional materials is of high interest, enabling manifestation of their novel properties or tailorable functions. Zinc oxide is a promising II-VI semiconductor, having wide band gap ~3.37 eV and a large exciton binding energy ~60 meV at room temperature. It has attracted increasing interest due to its potential applications in electronics [1], photonics [2], sensors [3], transistors [4], field emission displays [5], etc. It is one of the most gifted materials for the fabrication of short-wavelength optoelectronic devices including blue-UV light-emitting and room temperature UV lasing diodes [6]. ZnO possesses one of the richest family of nanostructures: various nanorods, nanopillars, nanowires, nanodonats, nanodrums, nanopropellers, nanonails, nanobridges etc. have been widely reported in literature [7]. However, such exotic morphologies of ZnO nanostructures complicate their functionality, i. e. hamper their practical applications, while the controllable growth of ordered and uniform ZnO nanostructure is highly desirable and may enable their possible applications in various devices. Particular interest represents the hierarchical ZnO nanostructures, being able to combine the high surface-to-volume ratio and fundamental material properties of ZnO, which may be essential for specific applications such as gas-and bio-sensors, hybrid solar cells, etc [8]. Recently, we have demonstrated the ability to grow well-ordered ZnO nanopillars on a seeding layer via selective homoepitaxial growth by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) [9]. Moreover, by this technique we succeeded in obtaining ZnO nanostructures of diverse morphology. Clear evolution of the

show abstract

Control of preferred orientation for ZnO films: control of self-texture

Cited by 693 publications

References 11 publications

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

Control of CVD-deposited ZnO films properties through water/DEZ ratio: Decoupling of electrode morphology and electrical characteristics

Morphology engineering of ZnO nanostructures

Contact Info

Product

Resources

About