Control of polarization reversal temperature behavior by surface screening in thin ferroelectric films

Morozovska, Anna N.; Eliseev, Eugene A.; Vorotiahin, Ivan S.; Silibin, Maxim V.; Kalinin, Sergei V.; Morozovsky, Nicholas V.

doi:10.1016/j.actamat.2018.08.041

Cited by 18 publications

(5 citation statements)

References 48 publications

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“…The top surface of the film is mechanically free and can be in an ideal electric contact with the top electrode, or electrically open, or covered with the surface screening charge. The charge density ( ) ϕ σ , appearing due to surface states [80], or electro-chemically active ions [81,82,83,84], depends on the electric potential ϕ [see Fig. 1(a)].…”

Section: B Problem Statementmentioning

confidence: 99%

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

et al. 2019

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Using Landau-Ginzburg-Devonshire approach, we predict the intrinsic instability of the ferroelectricferroelastic domain walls in the multiferroic BiFeO3 emerging from the interplay between the gradient terms of the antiferrodistortive and ferroelectric order parameters at the walls. These instabilities are the interface analogue of the structural instabilities in the vicinity of phase coexistence in the bulk; and so they do not steam from incomplete polarization screening in thin films or its spatial confinement, electrostrictive or flexoelectric coupling. The effect of BiFeO3 material parameters on the 71 o , 109 o , and 180 o walls is explored, and it is shown that the meandering instability appears at 109 o , and 180 o walls for small gradient energies, and the walls become straight and broaden for higher gradients. In contrast to the 180 o and 109 o domain walls, uncharged 71 o walls are always straight, and their width increases with increasing the tilt gradient coefficient. The wall instability and associated intrinsic meandering provide a new insight into the behavior of morphotropic and relaxor materials, wall pinning, and mechanisms of interactions between order parameter fields and local microstructure.

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Section: B Problem Statementmentioning

confidence: 99%

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

et al. 2019

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“…[56][57][58] The pristine large zigzag stripe domains in PMN-30PT, as suggested by theory, have a high depolarization field as well as a large elastic energy. [56,59,60] AC poling has been shown to break large domains into periodic smaller domains accompanied by a decrease in the coercive field after cycling, and the constantly sweeping high-frequency AC field used here can quickly increase the cycling number. [24,26,30] This decrease in domain size can efficiently lower the elastic energy and the depolarization field after reaching an energy equilibrium minimum with the energy cost of the new domain walls.…”

Section: Resultsmentioning

confidence: 99%

Engineering Domain Variants in 0.7Pb(Mg_1/3Nb_2/3)−0.3PbTiO₃ Single Crystals Using High‐Frequency AC Poling

Zhang,

Li,

Wang

et al. 2024

Small Methods

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Single crystals of (001)‐oriented 0.7Pb(Mg1/3Nb2/3)−0.3PbTiO3 (PMN‐30PT) with a composition near the morphotropic phase boundary have attracted considerable attention due to their superior dielectric and electromechanical performance. Recently, a new alternating current (electric field) poling approach used for the enhancement of dielectric and piezoelectric properties. However, the microscopic domain variants that govern the performance, especially under high‐frequency alternating current (AC) voltages, remain largely unexplored. In this work, the domain microstructure under AC poling reveals the presence of four monoclinic (MA) domain variants using a suite of scanning probe microscopy methods, and X‐ray diffraction (XRD) reciprocal space mapping is tuned. It is reported on the emergence of hierarchical fine domains – needle‐shaped, and 109° domain walls under applied high‐frequency AC poling. Time‐resolved Kelvin probe force microscopy (KPFM) reveals the charge dynamics and relaxation behavior of these needle domains and walls. The findings provide new insight and guidance to the domain engineering by high‐frequency AC poling for the development of advanced transducer technology.

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“…As a result, the interfaces or surfaces provide local regions with reduced nucleation barriers and thus are the preferential nucleation sites. At free ferroelectric surfaces, charge compensation by ambient screening ions strongly interact with ferroelectric states, exerting an impact on both polarization stability and switching dynamics [229][230][231][232]. For practical reasons ferroelectric thin films are usually in direct contact with electrodes, and consequently, the polarization switching is strongly affected by the buildin fields of Schottky junctions at the ferroelectric/electrode (semiconductor/metal).…”

Section: Interface Effects On Switching Dynamicsmentioning

confidence: 99%

Real-time studies of ferroelectric domain switching: a review

Xie

Pan

2019

Rep. Prog. Phys.

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Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domaindefect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.

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Control of polarization reversal temperature behavior by surface screening in thin ferroelectric films

Cited by 18 publications

References 48 publications

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

Engineering Domain Variants in 0.7Pb(Mg_1/3Nb_2/3)−0.3PbTiO₃ Single Crystals Using High‐Frequency AC Poling

Real-time studies of ferroelectric domain switching: a review

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Control of polarization reversal temperature behavior by surface screening in thin ferroelectric films

Cited by 18 publications

References 48 publications

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

Intrinsic structural instabilities of domain walls driven by gradient coupling: Meandering antiferrodistortive-ferroelectric domain walls inBiFeO3

Engineering Domain Variants in 0.7Pb(Mg1/3Nb2/3)−0.3PbTiO3 Single Crystals Using High‐Frequency AC Poling

Real-time studies of ferroelectric domain switching: a review

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Engineering Domain Variants in 0.7Pb(Mg_1/3Nb_2/3)−0.3PbTiO₃ Single Crystals Using High‐Frequency AC Poling