Abstract:Among III‐V semiconductor materials GaSb is highly interesting for several device applications such as optoelectronics.
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The epitaxial growth of GaSb nanowires has mainly been done using Au as the seed material which demonstrated several limitations like direct nucleation and crystal structure tuning.
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In this work we have investigated the epitaxial growth of Sn‐seeded GaSb nanowires directly nucleated on GaSb (111)A substrates with controlled Ga‐ and Sb‐polari… Show more
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