Control of oxygen vacancy concentration in ZnO nanowires containing sulfur as a reducing agent

Seo, Kyung Wook; Suh, Misook; Ju, Sanghyun

doi:10.1007/s13391-013-2176-5

Cited by 4 publications

(3 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ZnO is a multifunctional wide bandgap semiconductor, which has been exploited in various areas including nanomedicine, optoelectronics, and catalysis . It is well known that ZnO nanostructures, such as nanowires and nanosheets, can contain a high density of points defects, especially zinc ( V Zn ) and oxygen vacancies ( V O ) . Understanding the role of defects and their spatial distribution in nanostructures, especially defects at interfaces, is important since they can strongly affect the electrical properties and performance of ZnO‐based nanodevices .…”

Section: Introductionmentioning

confidence: 99%

“…[1,2] It is well known that ZnO nanostructures, such as nanowires and nanosheets, can contain a high density of points defects, especially zinc (V Zn ) and oxygen vacancies (V O ). [3,4] Understanding the role of defects and their spatial distribution in nanostructures, especially defects at interfaces, is important since they can strongly affect the electrical properties and performance of ZnO-based nanodevices. [5,6] It is generally accepted that V O is responsible for green luminescence (GL) at %2.4 eV in ZnO grown under oxygen-deficient conditions; however, the exact chemical origin of this emission remains controversial and has been attributed to V O defects in either neutral [7,8] or singly charged state.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging

Zhu

Phillips

Ton-That

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The spatial distribution of ubiquitous green luminescence (GL) in ZnO nanorods is investigated using cathodoluminescence (CL) spectral imaging. The vertically aligned, single‐crystal nanorods exhibit a strong GL emission at 2.42 eV at 80 K, attributable to oxygen vacancies. The spectral imaging reveals the GL emission is predominantly located in the surface layer of nanorods; the thickness and intensity of this layer decreases rapidly at elevated temperatures. On the other hand, the near‐band‐edge emission is weakest near the nanorod edges. The temperature‐dependent CL maps are consistent with the properties of a model in which singly ionized oxygen vacancies are stabilized by the surface band bending, which leads to the GL enhancement at the expense of near‐band‐edge emission. These results demonstrate the utility of spectral CL imaging to map the spatial distribution of defect luminescence in nanostructured materials.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging

Zhu

Phillips

Ton-That

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…[10] In 2013, Seo et al observed that ZnO nanowire transistors fabricated with ZnO NWs doped with sulfur as a reducing agent exhibited a more stable threshold voltage characteristic under light illumination than nanowire transistors fabricated with pure ZnO nanowires. [11] Although the experimental researches related to V O -ZnO nanowires (oxygen vacancy included ZnO nanowires) are abundant, theoretical studies are rare. In 2001, Chris and Van de Walle believed that the V O was a deep acceptor.…”

Section: Introductionmentioning

confidence: 99%

Structures and electrical properties of pure and vacancy-included ZnO NWs of different sizes

Zhou

Liu

et al. 2015

Chinese Phys. B

View full text Add to dashboard Cite

The structures and electronic properties of ZnO nanowires (NWs) of different diameters are investigated by employing the first-principles density functional theory. The results indicate that the oxygen vacancy (V O ) exerts a more evident influence on the band gap of the ZnO NWs. However, the effect will be weakened with the increase of the diameter. In addition, the energy band shifts downward due to the existence of V O and the offset decreases with the reduction of the V O concentration. As the concentration of surface Zn atoms decreases, the conduction band shifts downward, while 2p electrons are lost in the oxygen vacancy, resulting in the split of valence band and the formation of an impurity level. Our findings agree well with the previous observations and will be of great importance for theoretical research based on ZnO NWs.

show abstract

Admittance spectroscopy and electrical properties of Co3O4-doped ZnO

Hong

Lee

Kim

et al. 2014

Electron. Mater. Lett.

View full text Add to dashboard Cite

Control of oxygen vacancy concentration in ZnO nanowires containing sulfur as a reducing agent

Cited by 4 publications

References 30 publications

Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging

Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging

Structures and electrical properties of pure and vacancy-included ZnO NWs of different sizes

Admittance spectroscopy and electrical properties of Co3O4-doped ZnO

Contact Info

Product

Resources

About