Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

Abstract

We have studied the polarization properties of cleaved-edge photoluminescence (PL) from InAs/GaAs self-assembled quantum dots. Transverse-electric (TE) and transverse-magnetic (TM) mode PL intensities have been analyzed for the dots having 8 nm InxGa1−xAs capping layer with indium (In) composition of x=0 and 0.13. Polarization results show a dramatic change with the capping layer In compositions; TE-mode dominant PL is observed for dots with x=0, on the other hand, TM-mode dominant PL for dots with x=0.13. This polarization change has been attributed to the dot shape change using transmission electron microscopy images. These results suggest that the optical polarization anisotropy of the quantum dots can be controlled by manipulating the capping layer In composition.

Statistical properties of exciton fine structure splitting and polarization angles in quantum dot ensembles

“…As a generic feature, all the physical observations should exhibit some degree of random fluctuations [47]. Thirdly, the leasing from QDE requires the photons have good polarization property [48,49], and recently there are indeed some remarkable progresses along this line [50][51][52]. The statistical feature of polarization angle can find important application in these fields.…”

Polarization dependence study of electroluminescence and absorption from InAs∕GaAs columnar quantum dots

“…Due to their flat shape and quasibiaxial compressive strain, self-assembled quantum dots have a valence-band ground state of the heavyhole ͑hh͒ type, which does not couple to light polarized along the growth axis, i.e., transverse-magnetic ͑TM͒ mode in a guided-wave configuration. A hope exists, however, that both the shape of the confinement potential and the strain distribution can be changed by varying the QD aspect ratio, e.g., by changing the QD growth conditions, [4][5][6] or using a capping layer, 7 or close-stacking of several QDs. 8 In particular, depositing a short-period GaAs/ InAs superlattice ͑SL͒ on top of a seed QD layer results in the formation of columnar quantum dots ͑CQDs͒ with high aspect ratio.…”

Polarization properties of InAs/InGaAsP/InP quantum dot stacks

“…(VCSELs) [10,11], composition-modulated capping layers [12], stacks of many QD layers [13,14] and columnar QDs [15].…”