Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Furukawa, Yukio; Yonezu, Hiroo; Ojima, Kaoru; Samonji, Katsuya; Fujimoto, Yasuhiro; Momose, Kenji; Aiki, K.

doi:10.1143/jjap.41.528

Cited by 74 publications

(51 citation statements)

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“…Lattice-matched layers and slightly tilted substrates are used to overcome two of the main difficulties faced by the growth of III-V materials on silicon substrates: misfit dislocations and anti-phase lattice defects, in order to obtain defect-free III-V materials and to get large minority carrier diffusion lengths for the PV applications (Furukawa et al 2002;Momose et al 2001;Volz et al 2011;Létoublon et al 2011;Grassman et al 2009). The tandem GaAsPN/Si double-junction solar cell will be electrically connected with a tunnel junction (TJ), either Sibased or III-V based or hybrid (III-V/Si), depending on both the modeling results and the structural properties of the III-V compound.…”

Section: Monolithic Growth Of Diluted-nitride Iii-v-n Compounds On Simentioning

confidence: 99%

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Durand

Almosni

Wang

et al. 2014

Energy Harvesting and Systems

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GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtain defect-free GaP/Si pseudo-substrates suitable for the subsequent GaAsPN top junctions growth. Result shows that a double-step growth procedure suppresses most of the microtwins and a bi-stepped Si buffer can be grown, suitable to reduce the anti-phase domains density. We also review our recent progress in materials development of the GaAsPN alloy and our recent studies of all the different building blocks toward the development of a PIN solar cell. GaAsPN alloy with energy bandgap around 1.8 eV, lattice matched with the Si substrate, has been achieved. This alloy displays efficient photoluminescence at room temperature and good light absorption. An earlystage GaAsPN PIN solar cell prototype has been grown on a GaP(001) substrate. The external quantum efficiency and the I-V curve show that carriers have been extracted from the GaAsPN alloy absorber, with an open-circuit voltage above 1 eV, however a low short-circuit current density obtained suggests that GaAsPN structural properties need further optimization. Considering all the pathways for improvement, the 2.25% efficiency and IQE around 35% obtained under AM1.5G is however promising, therefore validating our approach for obtaining a lattice-matched dual-junction solar cell on silicon substrate.

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Section: Monolithic Growth Of Diluted-nitride Iii-v-n Compounds On Simentioning

confidence: 99%

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Durand

Almosni

Wang

et al. 2014

Energy Harvesting and Systems

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“…The samples of the GaPN/Si consist of a 30 nm thick GaP buffer layer on a Si (001) substrate misoriented by 4° toward [110], a 500 nm thick GaPN layer, a 60 nm thick thin Si cap layer. The nitrogen composition was controlled in the range of 1.5% to 2.6% by varying the rf-power [4]. The detailed growth conditions were reported elsewhere [5].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, relatively strong photoluminescence (PL) and electroluminescence have been observed [2,3]. We have realized a dislocation-free GaPN layer, which was lattice-matched to Si, grown on Si substrates with a thin GaP buffer layer [4,5]. Additionally, the PL was observed at room temperature (RT).…”

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Increase in luminescence efficiency of GaPN layers by thermal annealing

Utsumi

Yonezu

Furukawa

et al. 2003

phys. stat. sol. (c)

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The effect of rapid thermal annealing (RTA) on the luminescence properties of GaPN layers was investigated. GaPN layers were grown on GaP and Si substrates. The luminescence properties were evaluated by cathodeluminescence and low-temperature photoluminescence. It was found that the luminescence intensity was increased and the peak photon energy was shifted to the high-energy side in all samples after RTA. The luminescence intensity of the GaPN layers was increased with increasing the annealing temperature. It was also found that high-temperature RTA can be applied to the GaPN layer grown on the Si substrate with a thin Si cap layer rather than the GaPN layer on the GaP substrate. It was estimated that high-temperature RTA reduces the spatial fluctuation of nitrogen compositions and the density of defects attributed to nitrogen atoms. . Thus, GaPN has attracted much attention as a novel material, because GaPN with the nitrogen composition of about 2% is latticematched to Si. Moreover, relatively strong photoluminescence (PL) and electroluminescence have been observed [2,3]. We have realized a dislocation-free GaPN layer, which was lattice-matched to Si, grown on Si substrates with a thin GaP buffer layer [4,5]. Additionally, the PL was observed at room temperature (RT). However, the PL intensity was decreased with increasing the nitrogen composition as reported in previous papers [2,6]. The decrease in the PL intensity implies that the GaPN layer contains a large number of nonradiative recombination centers and/or deep-levels. These defects could be generated due to a large miscibility gap and fluctuations of nitrogen compositions in the GaPN layer. It is needed to improve the crystalline quality of GaPN layer.Thus, we have investigated the effect of rapid thermal annealing (RTA) on the luminescence properties of the GaPN layer grown on a GaP substrate (GaPN/GaP) and a Si substrate (GaPN/Si), respectively.

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“…The lattice mismatch of GaP to Si can be tuned by incorporation of N in GaP lattice [2][3][4], since the lattice constant and the bandgap energy of GaPN decreases with increasing N [5][6][7][8]. Previously, we have fabricated a dislocation-free Si/GaPN/Si structure by molecular beam epitaxy (MBE), where a thin GaP initial layer is formed on Si (001) by migration enhanced epitaxy [9].…”

Section: Introductionmentioning

confidence: 99%

Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Fukami

Umeno

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy‐hole quantum levels of self‐assembled InGaAsN/GaP QDs using the finite element method, the model‐solid theory and the band‐anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (∼120 meV/N at%), and that it is shown enough energy difference between the first electron‐quantum level and GaP X‐state when N composition is 1∼2%. For self‐assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Cited by 74 publications

References 0 publications

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Increase in luminescence efficiency of GaPN layers by thermal annealing

Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

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