Control of Millimeter-Wave Properties of High-Efficiency Double Drift Region IMPATTs through Enhancement of Saturation Current

Mazumder, N.; Roy, S. K.

doi:10.1002/pssa.2211370124

Cited by 9 publications

(4 citation statements)

References 14 publications

(7 reference statements)

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“…Alternatively, more power handling capability with better efficiency can be achieved if high bumps (charge spikes) are introduced selectively into the p and n regions of the depletion layer. The latter structures are usually called low-high-low type IMPATT diodes, and have already shown higher efficiency compared with flat-profile DDR IMPATTs [9]. We therefore selected the low-high-low type DDR IMPATTs to examine high-power operation.…”

Section: Choice Of An Appropriate Doping Profile For High-power Pulse...mentioning

confidence: 99%

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Mazumder¹,

Roy²

1997

Semicond. Sci. Technol.

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Pulsed-mode high-power generation in silicon double drift region (DDR) IMPATT devices is briefly reviewed, and current work is presented on the structural parameter dependence of pulsed silicon IMPATTs designed for operation around 94 GHz at a current density of 100 kA cm −2 .Computer studies are presented on three DDR structures: (i) flat, (ii) SLHL, i.e. low-high-low structure with single bump on either side of the p-n junction, and (iii) DLHL, i.e. low-high-low structure with double bumps on either side of the p-n junction. The results indicate that the DLHL structures exhibit much higher negative conductance than the other structures.It is seen that the magnitude of the peak negative conductance of the DLHL DDR IMPATT devices decreases appreciably if low-high-low bumps are changed from rectangular to trapezoidal shape. It is also found that the heights of the second bumps produce little variation in the negative conductance of the DLHL device, although the second bumps play a vital role in containing the space-charge effect at high current densities. The heights of the first bumps close to the metallurgical junction, however, produce appreciable changes in the small-signal behaviour of the DLHL diodes. Further, it has been found that the width of the active region, if increased gradually, makes the DLHL diode a narrow band device operating near the avalanche resonance frequency. The effect of variation of bump width and bump location (from the optimized structure) on the high-frequency properties of the device has also been studied and the results are presented in the paper.

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Section: Choice Of An Appropriate Doping Profile For High-power Pulse...mentioning

confidence: 99%

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Mazumder¹,

Roy²

1997

Semicond. Sci. Technol.

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“…In order to assess the role of leakage current in controlling the dynamic properties of IMPATT oscillators at MM-wave and THz frequencies, simulation experiments are carried out on the effect of M n (keeping M p very high ~ 10 6 ) and M P (keeping M n very high ~ 10 6 ) on (i) the high-frequency admittance characteristics (ii) the negative resistivity profiles, (iii) the Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems 122 device quality factor (Q) and (iv) of SDR and DDR diodes for both flat and SLHL structures,. The details of mathematical calculations based on modified boundary conditions due to enhancement of leakage current are described elsewhere [Mazumder et al (1993)].…”

Section: Basic Operation Principle Of Impatt Diodesmentioning

confidence: 99%

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

Mukherjee¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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“…The enhanced leakage current alters the avalanche phase delay which, in turn, modifies the phase and magnitude of terminal current in the device oscillator circuit. Previous experimental [7,8] and theoretical [9][10][11] studies on optically illuminated IMPATT diodes indicated that the photogenerated carriers reduce the efficiency and power output of the devices, but increase the tuning range of the devices in the mm-wave frequency band. These interesting results for photo-illuminated IMPATTs have prompted the authors to theoretically investigate the role of external radiation in modulating the admittance and negative resistance properties of the GaN IMPATT device in the THz regime.…”

Section: Materials and Physical Properties (Wz-gan)mentioning

confidence: 99%

GaN IMPATT diode: a photo-sensitive high power terahertz source

Mukherjee

Mazumder

Roy

et al. 2007

Semicond. Sci. Technol.

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The prospects of wurtzite phase single-drift-region (SDR), flat and single-low-high-low (SLHL) type GaN IMPATT devices as terahertz sources are studied through a simulation experiment. The study indicates that GaN IMPATT diodes are capable of generating high RF power (at least 2.5 W) at around 1.45 THz with high efficiency (17-20%). The superior electronic properties of GaN make this a promising candidate for IMPATT operation in the THz regime, unapproachable by conventional Si, GaAs and InP based IMPATT diodes. The effect of parasitic series resistance on the THz performance of the device is further simulated. It is interesting to note that the presence of a charge bump in a flatly doped SDR structure reduces the value of parasitic series resistance by 22%. The effects of photoillumination on the devices are also investigated using a modified double iterative simulation technique. Under photo-illumination (i) the negative conductance and (ii) the negative resistance of the devices (both flat and SLHL) decrease, while the frequency of operation and the device quality factor shift upwards. However, the upward shift in operating frequency is found to be more (∼16 GHz) in the case of the SLHL SDR IMPATT device. The study indicates that GaN IMPATT is a promising opto-sensitive high power THz source.

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Control of Millimeter-Wave Properties of High-Efficiency Double Drift Region IMPATTs through Enhancement of Saturation Current

Cited by 9 publications

References 14 publications

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Studies on pulsed mm-wave low - high - low silicon IMPATT diodes at high current density and dependence on structural parameters

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

GaN IMPATT diode: a photo-sensitive high power terahertz source

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