2018
DOI: 10.1063/1.5039430
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Control of magnetic anisotropy in epitaxial Co2MnAl thin films through piezo-voltage-induced strain

Abstract: The voltage-controlled magnetic anisotropy of various magnetic materials is an effective method to realize the electronic devices with low power consumption. Here, we investigated the magnetic properties in Co2MnAl/GaAs heterostructures controlled by piezo voltages-induced strain using the magneto-optical Kerr effect microscopy. The coexistence of the in-plane cubic and uniaxial magnetic anisotropies was observed in the initial state of Co2MnAl thin films. The magnetic anisotropy was manipulated effectively by… Show more

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Cited by 11 publications
(9 citation statements)
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“…In order to understand the significance of the interface in the global magnetic hysteresis, we considered an IP-hysteresis recorded at room temperature to determine the magnetic anisotropy of the specimens. The effective uniaxial (K eff u ) and cubic (K eff c ) anisotropy constants can be expressed as 63,64…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In order to understand the significance of the interface in the global magnetic hysteresis, we considered an IP-hysteresis recorded at room temperature to determine the magnetic anisotropy of the specimens. The effective uniaxial (K eff u ) and cubic (K eff c ) anisotropy constants can be expressed as 63,64…”
Section: Resultsmentioning
confidence: 99%
“…In order to understand the significance of the interface in the global magnetic hysteresis, we considered an IP-hysteresis recorded at room temperature to determine the magnetic anisotropy of the specimens. The effective uniaxial ( K eff u ) and cubic ( K eff c ) anisotropy constants can be expressed as 63,64 where K eff u is the effective uniaxial anisotropy, K eff c is the effective cubic anisotropy, H s is the saturation magnetic field, and k is the slope of the hysteresis loop between − H s and + H s . The values of M s , k , K eff u , and K eff c for Ni/Si, rubrene/Ni/Si, and Ni/rubrene/Si are presented in Table 2.…”
Section: Resultsmentioning
confidence: 99%
“…To date, there have been multiple types of electrical manipulation ways of the magnetization rotation or magnetic anisotropy variation, such as spin-orbit torque (SOT), [1][2][3][4][5][6][7] spin transfer torque (STT), [8][9][10][11] magneto-electrical coupling (MEC) effect, [12][13][14][15][16][17] and strain. [18][19][20][21][22][23][24][25] The piezo-voltage-induced strain, as a way of voltage-controlled magnetic anisotropy (VCMA), has attracted the attention of many researchers due to the performance of low-power consumption. 22,25 The main studies of strain controlled magnetization are related to the inverse piezoelectric effect of piezoelectric materials in the ferromagnetic/piezoelectric heterostructure.…”
Section: Introductionmentioning
confidence: 99%
“…23 However, the previous relative studies of straincontrolled magnetization rotation were mainly demonstrated in a uniaxial regulation manner. [22][23][24]26 The stress regulation characteristic disappears or weakens when the specic crystal orientation of magnetic thin lms rotates relative to the stress axis. This problem would be effectively avoided by realizing dual-axis or multi-axis stress-regulated magnetization rotation.…”
Section: Introductionmentioning
confidence: 99%
“…The magnetoelastic part of magnetic anisotropy in Co 2 FeAl films was studied by Belmeguenai et al 66 , 67 . The effects connected with piezoelectric strain were studied in Co 2 FeAl 68 and Co 2 MnAl 69 . The changes in magnetic anisotropy associated with strain-induced tetragonal lattice distortion in Co 2 MnSi and Co 2 FeSi thin films were investigated by Pandey et al 70 , nevertheless, this approach neglected the presence of surface effects.…”
Section: Introductionmentioning
confidence: 99%