Control of Lateral Epitaxial Nanothin β-In2Se3 Grown by Molecular Beam Epitaxy: Implications in Fabricating of Next-Generation Transistors
Ssu-Kuan Wu,
Hong-Jyun Wang,
Sheng-Wei Hsiao
et al.
Abstract:This study was meticulously
conducted, delving into the epitaxial
growth of nanothin β-In2Se3 films on sapphire
(0001) using molecular beam epitaxy. The growth temperature was carefully
set at 480 °C, and the selenium to indium flux ratio (R
Se/In) was systematically varied from 1 to 100.
The phase transformation from γ-In2Se3 to β-In2Se3 was precisely controlled
by manipulating the R
Se/In and confirmed
through Raman scattering measurements and synchrotron-based grazing-incidence
wide-angle X-ray scattering. … Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.