Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

Bennett, B. R.; Shanabrook, B. V.; Wagner, R. J.; Davis, J. L.; Waterman, James

doi:10.1063/1.109854

Cited by 58 publications

(28 citation statements)

References 16 publications

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“…[23][24][25][26] Therefore, to evaluate the impact of unintentional Sb in the InAs layer, the X-ray diffraction data are further analyzed using a model with a small amount of Sb in the InAs layer. Under the strain-balanced condition, this results in a reduced level of tensile strain in the InAs layer and corresponding larger reduction in the compressive strain of the InAsSb layer that is typically not as thick as the InAs layer.…”

Section: Ellipsometry and Photoluminescence Of Inas/inassb Supermentioning

confidence: 99%

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Webster

Riordan

Liu

et al. 2015

Journal of Applied Physics

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"Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy" (2015). The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and strainbalanced InAs/InAs 1Àx Sb x (x $ 0.1-0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffraction, spectroscopic ellipsometry, and temperature dependent photoluminescence spectroscopy. The photoluminescence and ellipsometry measurements determine the ground state bandgap energy and the X-ray diffraction measurements determine the layer thickness and mole fraction of the structures studied. Detailed modeling of the X-ray diffraction data is employed to quantify unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattices. A Kronig-Penney model of the superlattice miniband structure is used to analyze the valence band offset between InAs and InAsSb, and hence the InAsSb band edge positions at each mole fraction. The resulting composition dependence of the bandgap energy and band edge positions of InAsSb are described using the bandgap bowing model; the respective low and room temperature bowing parameters for bulk InAsSb are 938 and 750 meV for the bandgap, 558 and 383 meV for the conduction band, and À380 and À367 meV for the valence band. V C 2015 AIP Publishing LLC.[http://dx

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Section: Ellipsometry and Photoluminescence Of Inas/inassb Supermentioning

confidence: 99%

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Webster

Riordan

Liu

et al. 2015

Journal of Applied Physics

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“…For example, interfacial control in InAs/GaSb can be achieved by migration-enhanced epitaxy. 23 To grow an InAs layer on GaSb with InSb interfaces, the growth shutter sequence is GaSb/Sb/In/InAs. For the same structure with GaAs interfaces, the sequence is GaSb/Ga/As/InAs.…”

Section: Fig 5 X-ray Diffraction -2 Scans For Superlattices Formed mentioning

confidence: 99%

Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures

Bennett

Shanabrook

Twigg

1999

Journal of Applied Physics

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Superlattices consisting of As monolayers ͑MLs͒ in ͑In,Ga,Al͒Sb and Sb MLs in ͑In,Ga,Al͒As were grown by molecular beam epitaxy and characterized by x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. In all cases, well-defined superlattices were formed when the growth temperature was sufficiently low. As temperature increases for the As MLs in antimonides, substantial intermixing occurs. For Sb MLs in arsenides, Sb evaporation from the surface increases with increasing growth temperature. These results are discussed in the context of device heterostructures containing InAs/GaSb and InAs/AlSb heterojunctions. ͓S0021-8979͑99͒05104-X͔

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“…8 Either InSb-like or GaAs-like interfaces can be grown on either GaSb or InAs surfaces; 9 XSTM studies found that both the GaAs-like and InSb-like interfaces have a similar degree of disorder, 5 but that interfaces grown on InAs are generally more ordered than those grown on GaSb. 5,6 These studies concluded that intermixing is the primary source of disorder.…”

Section: Naval Research Laboratory Washington DC 20375mentioning

confidence: 99%

Origins of interfacial disorder in GaSb/InAs superlattices

Thibado

Bennett

Twigg

et al. 1995

Applied Physics Letters

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Control of interface stoichiometry in InAs/GaSb superlattices grown by molecular beam epitaxy

Cited by 58 publications

References 16 publications

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures

Origins of interfacial disorder in GaSb/InAs superlattices

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