Control of holding currents in amorphous threshold switches

Hughes, Alex J.; Holland, Phil; Lettington, Alan H.

doi:10.1016/0022-3093(75)90116-7

Cited by 23 publications

(4 citation statements)

References 5 publications

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“…Fig. 7a shows that I hold_OTS decreases inversely with Rs, agreeing with previous works that it follows a linear line in the log-log scale [25]. (I hold_OTS , V hold_OTS ) is the on-set point of defect cluster shrinking in the OTS when the differential resistance of OTS starts to become negative.…”

Section: Characterization Of the Switch-off Processsupporting

confidence: 90%

“…The discrepancy in the small switching-off region after the holding point in Figs. 3b can be attributed to the differences in the test methods [24,25].…”

Section: A New Observations In Ots-only I-v With Different Rsmentioning

confidence: 99%

“…For example, it was found that Rs defines the load line for the selector and hence its operation points and the holding current. Therefore, the selector is either switching volatilely between the static off-state and on-state, or oscillating in the transitional negative-differential-resistance (NDR) state [24][25][26][27]. Despite these early efforts, detailed experimental evidence is still lacking for characterizing the fast and sharp switching process in modern OTS devices.…”

Section: Introductionmentioning

confidence: 99%

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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zhang

Degraeve

et al. 2023

IEEE Trans. Electron Devices

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Experimental evidence and analysis in this work provide new insights into the fast-switching process in GeAsTe ovonic threshold switching (OTS) selectors. For the first time, the full switching-off process, covering the defect cluster shrinking and rupture stages, can be measured and characterized. Two distinct switch-off mechanisms and their dependence on the total impedance of the selector and resistor (1S1Rs) circuit are identified. The impact of series resistance value on the switching process, the 1S1Rs operation, and the underlying mechanisms can be explained by the dynamic resistance of OTS that is induced by the transition of defect clusters. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

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Section: Characterization Of the Switch-off Processsupporting

confidence: 90%

“…The discrepancy in the small switching-off region after the holding point in Figs. 3b can be attributed to the differences in the test methods [24,25].…”

Section: A New Observations In Ots-only I-v With Different Rsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zhang

Degraeve

et al. 2023

IEEE Trans. Electron Devices

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“…This threshold voltage, together with the holding current and holding voltage, was measured with the circuit described previously by Hughes et al (1975). In this circuit a current limiting resistor of 100 k Q was connected in series with the niobate device; lower values of this resistor fore-shortened the life of monostable devices.…”

Section: Experimental Characteristics Of Monostable Devicesmentioning

confidence: 99%

The characteristics of monostable switching in amorphous niobate films

Thomas¹,

Lettington²

1977

J. Phys. D: Appl. Phys.

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Describes the preparation of monostable devices using amorphous films of 19 at.% Nb, 13 at.% Na, 2 at.% Si, 66 at.% O. Forming occurs in these devices, similar to the behaviour observed in chalcogenide films. The threshold voltages of both virgin and formed devices are proportional to the square of the electrode separation. This observation has been interpreted as suggesting that excess charge is injected into the device prior to switching. It was found that small DC currents flowing during the on-state do not degrade the characteristics of a monostable device; hence potential applications include use as latching devices in matrix-addressed multi-element displays and other volatile memories.

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Electrical Switching and Memory Effects in Thin Amorphous Chalcogenide Films

Shaw

1985

Physics of Disordered Materials

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Control of holding currents in amorphous threshold switches

Cited by 23 publications

References 5 publications

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

The characteristics of monostable switching in amorphous niobate films

Electrical Switching and Memory Effects in Thin Amorphous Chalcogenide Films

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