Control of Heteroepitaxial Growth of CaCu3Ti4O12 Films on SrTiO3 Substrates by MOCVD

Catalano, Maria R.; Malandrino, Graziella; Toro, Roberta G.; Nigro, Raffaella Lo

doi:10.1002/cvde.201106960

Cited by 6 publications

(10 citation statements)

References 37 publications

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“…The CuO peaks are broad and not very intense, indicating a low degree of crystallinity. The related SEM image also confirms that no relevant crystallization process occurred and not well defined aggregations of grains are only visible …”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmssupporting

confidence: 65%

“…f) SEM image of CaCu 3 Ti 4 O 12 film on SrTiO 3 substrate shows a surface morphology characterized by squared grains about 200 nm wide. Reproduced with permission …”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

“…Depositions on (001)SrTiO 3 substrates were also performed by the two‐step in situ process, but results were not so successful as in the case of LaAlO 3 substrates. In fact, the XRD pattern showed the formation of CCTO and CaTiO 3 (CTO) oxides . In particular, the principal peaks (23.30° and 47.62°) have been related to the formation of oriented (001)CTO films and only one peak (49.52°) of lower intensity corresponded to the CCTO phase.…”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

“…An alternative deposition route has been searched and further attempts to grow CCTO thin films on (001)SrTiO 3 substrates have been carried out using an one‐step approach at 750 °C deposition temperature (Table ) . Depositions have not directly cbeen arried out at 900 °C because the deposited CCTO layers always showed a copper deficient stoichiometry.…”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

“…To our best knowledge, the present MOCVD process is, up to date, the only chemical vapor deposition approach reported for the synthesis of CCTO thin films, while other attempts have been only carried out by pulsed laser deposition, chemical solution or sol‐gel methods . In particular, it is reported on CCTO thin films deposited on various substrates, ranging from single crystals such as (001)LaAlO 3 and (001)SrTiO 3 . to technological Pt/TiO 2 /SiO 2 /Si(100) and IrO 2 /Ir/TiO 2 /SiO 2 /Si multilayer electrodes.…”

Section: Introductionmentioning

confidence: 99%

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MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

Nigro

2017

Adv Materials Inter

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range. [7][8][9] The CaCu 3 Ti 4 O 12 (CCTO) perovskite has been defined "giant-κ" materials, and looked suitable for high capacity density planar condensers representing key devices for wireless communication. In fact, since it did not show any ferroelectric transition or relaxor behaviour, appeared really attractive for the replacement of ferroelectrics, which are known for having lower dielectric constant values and stronger temperature dependence. Huge efforts of different research groups have been devoted to determine the origin of such prodigious dielectric response. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] Some theories tried to correlate the CCTO high-κ value to its peculiar cubic perovskite structure. [10][11][12] In fact, it has been demonstrated that the Ti 4+ symmetry in CCTO is much lower than in a cubic standard ABO 3 perovskite cell, because of the tilting of TiO 6 octahedra caused by the square-planar Cu 2+ ions. [14] Hence, its high permittivity could be due to the local dipole moments associated with off-center displacement of Ti 4+ ions, which could also rule out the pure ferroelectric behaviour. Nevertheless, the most accepted explanation of such huge dielectric constant has been related to the "internal barrier-layer mechanism", which has been discussed in CCTO ceramics in terms of conducting grains and insulating grain boundaries. [13][14][15][16][17][18][19][20][21] All these results have been actually collected on bulk materials, however it is not obvious to find the same properties on thin films. In this context, in order to evaluate the potentiality for a real integration of this novel material in device fabrication, the investigation of thin film dielectric properties has been a mandatory issue. First attempts to grow CCTO thin films have been carried out by pulsed laser deposition technique on perovskite oxide substrates [22][23][24][25] and later on technological substrates such as platinum electrodes on silicon. [26][27][28][29] It has been found that the dielectric constant of CCTO thin films is not as huge as in the case of CCTO ceramics, and that, in best conditions, a dielectric constant value in the order of 1500 can be reached [27] and, most of all, that this value strongly depends on many factors, such as deposition conditions, substrate nature, post-deposition treatments and so on. [29][30][31][32][33][34] Actually, a variation of the dielectric constant value with temperature or frequency has been also observed in ceramics, depending on synthetic method and/or post-sintering conditions. [35][36][37] From these discoveries until CaCu 3 Ti 4 O 12 (CCTO) perovskite has been widely investigated because of its excellent dielectric properties, i.e. huge and constant permittivity upon varying temperature and frequencies, which are really attractive in wireless communication devices. These characteristics have been originally demonstrated in single crystals and ceramics. Hence, huge efforts have been focused on the fabrication and investigation of CCTO thin films. F...

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Section: Mocvd Process For Cacu3ti4o12 Thin Filmssupporting

confidence: 65%

“…f) SEM image of CaCu 3 Ti 4 O 12 film on SrTiO 3 substrate shows a surface morphology characterized by squared grains about 200 nm wide. Reproduced with permission …”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

Nigro

2017

Adv Materials Inter

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Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Presti

Pellegrino

Malandrino

2022

Adv Materials Inter

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Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail.

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The synthesis and properties of CaCu₃ Ti₄ O₁₂ thin films

Yang

Wang

Liu

2013

Surf. Interface Anal.

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The CaCu 3 Ti 4 O 12 (CCTO) thin films were synthesized via a metal-organic solution containing stoichiometric amounts of the metal cations at 700°C for 1 h. The stable metal-organic solution was prepared by dissolving calcium nitrate, copper nitrate, and tetrabuty titanate in grain alcohol. The phases, microstructures, and electric properties of CCTO thin films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscope, and electric measurements. The results show that the CCTO thin films have homogeneous microstructure, smooth surface, low leakage current, and high values of dielectric constant. The low leakage current can be attributed to the small surface roughness. The high value of dielectric constant can be attributed to the internal barrier layer capacitor mechanism and metal-insulator-semiconductor junction of CCTO thin films.

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Control of Heteroepitaxial Growth of CaCu₃Ti₄O₁₂ Films on SrTiO₃ Substrates by MOCVD

Cited by 6 publications

References 37 publications

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

The synthesis and properties of CaCu₃ Ti₄ O₁₂ thin films

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Control of Heteroepitaxial Growth of CaCu3Ti4O12 Films on SrTiO3 Substrates by MOCVD

Cited by 6 publications

References 37 publications

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu3Ti4O12) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu3Ti4O12) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

The synthesis and properties of CaCu3 Ti4 O12 thin films

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Product

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Control of Heteroepitaxial Growth of CaCu₃Ti₄O₁₂ Films on SrTiO₃ Substrates by MOCVD

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

The synthesis and properties of CaCu₃ Ti₄ O₁₂ thin films