Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

Zhao, Wenhan; Liu, Lijun

doi:10.1016/j.jcrysgro.2016.10.041

Cited by 29 publications

(4 citation statements)

References 21 publications

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“…Table 1 lists the properties of the main substances, including the thermal properties and emissivity. The unique properties of silicon, graphite as a cooling system pipes, inert gases, such as argon, quartz crucibles (silica) and iron (steel), carbon felt as a thermal insulator, and water as a cooling system, which all influence the growth of the crystals, are used [18][19][20].…”

Section: Mathematical Modeling and Experimentsmentioning

confidence: 99%

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

et al. 2020

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Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTCD) and their production quality of monocrystalline silicon ingot was compared with that of the basic type cooling design (BTCD) system. The designed cooling system improved the uniformity of the temperature gradient in the crystal and resulted in the significant decrease of the thermal stress. Moreover, the silicon monocrystalline ingot growth rate has been enhanced to 18% by using BTCD system. The detailed simulation results have been discussed in the manuscript. The present research demonstrates that the proposed cooling system would stand as a promising technique to be applied in CZ-Si crystal growth with a large size/high pulling rate.

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Section: Mathematical Modeling and Experimentsmentioning

confidence: 99%

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

et al. 2020

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“…Nevertheless, it is very difficult to detect the S-L interface in the actual production process of Czochralski silicon single crystal. Therefore, if it is possible to predict the shape of the S-L interface and the thermal stress on the interface through calculation, this will be an important basis for the process optimization and thermal zone optimization design [14][15][16][17][18][19][20][21][22] of low-defect single crystal silicon.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

Li,

Zhao,

Huang

et al. 2023

Silicon

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During the growth of Czochralski single crystal silicon, the change of solid-liquid interface shape leads to uneven distribution of thermal stress, and the concentration of thermal stress leads to crystal defects in the process of single crystal formation, which reduces the efficiency of solar cells. In order to avoid a large number of crystal defects caused by the concentration of thermal stress near the solid-liquid interface, the effect of the solid-liquid interface shape on thermal stresses is investigated in this study using numerical calculations to determine the most favourable solid-liquid interface shape for single crystal silicon growth.The results show that the von Mises stress on the m-shaped solid-liquid interface is smaller ; von Mises stress distribution on the solid-liquid interface of a shape is more uniform ; the von Mises stress on the solid-liquid interface of the n-shaped solid-liquid interface is large, and the von Mises stress can be released by controlling the solid-liquid flipping through a small range of pulling speed fluctuations, thereby reducing defects in single-crystal silicon.

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“…Despite these advantages for cast silicon, the market share of Cz silicon is steadily growing and already exceeded the share of cast silicon in 2019, a trend which is expected to continue in the next years. This observation reflects the difference in technology optimization where Cz silicon production is benefitting from recent developments like multiple ingot pulling by recharging, continuous-feeding or increased growth rate by adapted cooling schemes [7].…”

Section: Introductionmentioning

confidence: 99%

The potential of cast silicon

Schubert

Schindler

Benick

et al. 2021

Solar Energy Materials and Solar Cells

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Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

Cited by 29 publications

References 21 publications

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Optimal Cooling System Design for Increasing the Crystal Growth Rate of Single-Crystal Silicon Ingots in the Czochralski Process Using the Crystal Growth Simulation

Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects

The potential of cast silicon

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