Control of film morphology and its effects on subthreshold characteristics in dibenzotetrathiafulvalene organic thin-film transistors

Yamada, Toshikazu; Hasegawa, Tatsuo; Hiraoka, Maki; Matsui, Hiroyuki; Tokura, Y.; Saito, G.

doi:10.1063/1.2940593

Cited by 30 publications

(25 citation statements)

References 18 publications

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“…Hole mobility in the range 0.1-1 cm 2 /Vs has been reported for solution-processed single crystals of DB-TTF, [18,19] whereas devices comprising vacuum-deposited DB-TTF thin films show field-effect mobility that ranges from 10 -2 to 10 -1 cm 2 /Vs ( Figure S1). [20][21][22][23] However, typically the devices are reported to exhibit large threshold voltages (V TH > 20 V) and are very unstable in environmental conditions…”

Section: Resultsmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

121

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In electronics, the field-effect transistor (FET) is a crucial corner stone and successful integration of this semiconductor device into circuit applications requires stable and ideal electrical characteristics over a wide range of temperatures and environments. Solution processing, using printing or coating techniques, has been explored to manufacture organic field-effect transistors (OFET) on flexible carriers; enabling radically novel electronics applications. Ideal electrical characteristics, in organic materials, are typically only found in single crystals. Tiresome growth and manipulation of these hamper practical production of flexible OFETs circuits. To date, neither devices nor any circuits, based on solution-processed 2 OFETs, has exhibited an ideal set of characteristics similar or better than today's FET technology based on amorphous silicon (a-Si FETs). Here, we report bar-assisted meniscus shearing of dibenzo-tetrathiafulvalene to coat-process self-organized crystalline organic semiconducting domains with high reproducibility. Including these coatings as the channel in OFETs, we observe electric field-and temperature-independent charge carrier mobility and no bias stress effects. Further, we measure record-high gain in OFET inverters and exceptional operational stability in both air and water.

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Section: Resultsmentioning

confidence: 99%

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Pozo

Fabiano

Pfattner

et al. 2015

Adv Funct Materials

121

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“…It is expected that their ability to afford a vast variety of molecular conductors and superconductors permits their use in high-performance single-component channel materials of OFETs. To date, organic thin-film transistors with a mobility of about 0.1-1.4 cm 2 Vs −1 have been reported for some TTF analogues [57][58][59][60][61][62][63]. Figure 13(a) shows the molecular structures of some TTF analogues studied for OFETs: dithiophene-tetrathiafulvalene (DTTTF), hexamethylenetetrathiafulvalene (HMTTF), dibenzo-tetrathiafulvalene (DBTTF) and dinaphtho-tetrathiafulvalene (DNTTF).…”

Section: Sc-ofets Of Ttf Analoguesmentioning

confidence: 99%

Organic field-effect transistors using single crystals

Hasegawa

Takeya

2009

Science and Technology of Advanced Materials

348

215

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Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs −1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

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“…The reported mobility is μ = 11 cm 2 /Vs for HMTTF crystals and μ = 6.9 cm 2 /Vs for thin films, 30,31 as well as μ = 0.55 cm 2 /Vs for DBTTF films. [32][33][34][35] The transistor characteristics are, however, comparatively susceptible to surface treatments owing to the small ionization potentials. Ordinary organic semiconductors like pentacene have been investigated extensively, [24][25][26][27] and even band-like transport has been observed in the single crystals, where the mobility increases with lowering the temperature.…”

Section: Introductionmentioning

confidence: 99%

Analysing organic transistors based on interface approximation

Akiyama

Mori

2014

AIP Advances

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Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region.

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Control of film morphology and its effects on subthreshold characteristics in dibenzotetrathiafulvalene organic thin-film transistors

Cited by 30 publications

References 18 publications

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Single Crystal‐Like Performance in Solution‐Coated Thin‐Film Organic Field‐Effect Transistors

Organic field-effect transistors using single crystals

Analysing organic transistors based on interface approximation

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