Control of Emission Wavelength of GaInN Single Quantum Well, Light Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition in a Split-Flow Reactor

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

“…3 shows the dependence of the electroluminescence (EL) peak wavelength from InGaN by continuous current injection on the growth temperature of the InGaN layers and the height of the reactor. Our results for the relationship between the wavelength and growth temperature with five quantum wells grown by the reactor with a height of 7.5 mm have the same trend as those in previous studies [3,5]. This universal trend indicates that the mechanism of In incorporation is identical in all of these cases, and the In content is controlled in the same way in different reactors; in other words, the In content of InGaN is strongly affected by the growth temperature.…”

“…This difference is predominantly due to the temperature distribution of the heater; the surface temperature on the periphery of the substrate is lower than that of the center, because the similar gradation of the emission wavelength was observed for MQWs with every growth condition grown in both reactors. [3,5]. The red symbols represent our data; the empty squares, empty circles, filled circles, and filled diamonds indicate 5QWs grown using the 7.5-mm-height reactor, 5QWs grown using the 5.0-mm-height reactor, the center, and the periphery of the substrates including 16QWs grown using the 5.0-mm-height reactor.…”

“…Light-emitting diodes (LEDs) are a representative candidate for next generation illumination and displays, and thus can replace incandescent and fluorescent lamps since the electric power consumption of LEDs is comparatively much smaller. III-nitrides, especially InGaN, are desirable as materials for LEDs for illumination applications because the bandgap energy of InGaN from 0.65 to 3.4 eV, corresponding to 365-1900 nm, can cover the whole range of visible light wavelengths and the bandgap is controlled just by changing the group-III content [1][2][3][4][5][6][7][8]. White LEDs consisting of three primary color LEDs, i.e., red, green, and blue, can be obtained on a chip using only InGaN.…”

Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage

“…Blue and green InGaN light-emitting diodes (LEDs) are studied extensively and already are commercially available. On the other hand, not so many studies have been conducted regarding red InGaN LEDs [1][2][3][4][5] and they are not commercialized yet. The crystal growth of InGaN red LEDs is regarded as a challenge due to the difficulty in growing InGaN with high In composition.…”

Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures

“…Up to now there were a number of attempts to obtain on-wafer EL data [1][2][3], but they are usually destructive and more importantly unreliable. This paper will look into ways of employing palladium as a contact to GaN-based devices in order to get a simple and reliable mapping of the on-wafer's electroluminescence properties.…”