Control of electrical properties and gate bias stress stability in solution-processed a-IZO TFTs by Zr doping

Choi, Won Seok; Jo, Hyeonah; Kwon, Mijin; Jung, Bernhard

doi:10.1016/j.cap.2014.10.018

Cited by 21 publications

(10 citation statements)

References 34 publications

(42 reference statements)

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“…where ΔVT0 is the threshold voltage shift at infinite time, τ is the characteristic trapping time for carriers, and β is the stretchedexponential exponent. 22 As for flexible ZnO TFTs, the obtained τ values are 9.7×10 4 s (PBS) and 1.5×10 5 s (NBS), the obtained β values are 0.44 (PBS) and 0.87 (NBS). The characteristic trapping time τ is the figure of merit for gate bias stability.…”

Section: Resultsmentioning

confidence: 81%

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36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Dong

et al. 2021

Symp Digest of Tech Papers

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Flexible ZnO thin‐film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrate with a maximum processing temperature of 200 °C. The flexible ZnO TFTs show competitive electrical properties with high saturation mobility (μsat) of 17.5 cm2/Vs, small subthreshold slope (SS) of 91 mV/dec, high Ion/Ioff of 3.8×109 and good uniformity. The larger characteristic trapping time τ for flexible ZnO TFT under NBS is the indication of less trapped charges compared with the device under PBS. In addition, we also investigate the mechanical bending test of flexible ZnO TFTs. The flexible ZnO TFTs exhibit a negative turn‐on voltage (Von) shift and degraded SS with increasing tensile strains because the mechanical strain at the bending part of TFT channel generates donor‐like and acceptor‐like defects. Our results demonstrate that ALD process flexible ZnO TFTs exhibiting tremendous potential to be applicable in flexible electronics.

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Section: Resultsmentioning

confidence: 81%

“…The characteristic trapping time τ is the figure of merit for gate bias stability. 22 The larger τ for flexible ZnO TFT under NBS indicates less charge trapping compared with the device under PBS. 23 To evaluate the mechanical stability of flexible ZnO TFTs, a set of electrical measurements under various bending radii were carried out.…”

Section: Resultsmentioning

confidence: 99%

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Dong

et al. 2021

Symp Digest of Tech Papers

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“…However, there is fatal problem that the region which In−Sn−O could be a stable amorphous state; it can be easily crystallized during device fabrication process. In contrast, In−Zn−O can maintain a stable amorphous state at higher temperatures about 500 • C. For these reasons, we focus on the amorphous In−Zn−O (a-IZO) owing to its excellent etchability, high crystallization temperature, and high electrical and optical properties that are comparable to those of c-In−Sn−O [25,27,28]. The a-IZO has stable electrical and optical properties in the amorphous form; these properties are maintained up to a crystallization temperature [25].…”

Section: Introductionmentioning

confidence: 99%

“…Despite the higher mechanical stability of a-IZO, the mechanical stability of a-IZO needs improvement. To this end, many kinds of dopants such as heavy or alkali elements have been doped in IZO, such as W, Zr, Ga, Ni, Li, Na, and K [4,13,14,27,28].…”

Section: Introductionmentioning

confidence: 99%

In−Zn−O Thin Films with Hydrogen Flow

et al. 2019

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Amorphous In−Zn−O thin films were deposited with various hydrogen flow rates using a magnetron sputtering system. With the addition of hydrogen, the mechanical stability of the films was dramatically improved without any degradation of electrical properties and optical transmittance. The average change in the resistance of the sample deposited at a hydrogen flow rate of 0.4% was approximately six times lower than that in the sample deposited without hydrogen. Both, the compressive residual stress and absorption coefficient of the sample, decreased with hydrogen flow, indicating similar trends with the average change in the resistance. The absorption coefficient near 3.1 eV indicated that subgap state defects also decreased with increasing hydrogen flow rates. It was confirmed that the improvement in mechanical stability was derived from the suppression of subgap defects due to the hydrogen impurity. Thus, we demonstrated that hydrogen is a promising candidate for stabilizing the mechanical properties of oxide thin films.

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“…Although IGZO holds the edge and is commonly-seen in TFT fabrication, it is known that scientists have tried to seek alternatives to replace gallium because the weak Ga–O bond may result in instability issues. Like magnesium (Mg), hafnium (Hf), and zirconium (Zr), titanium has the ability to suppress excess carrier generation and make devices more stable under bias and illumination stress [ 18 , 19 , 20 ]. Furthermore, titanium is non-noxious, and has a lower electronegativity (1.54) as well as a lower standard electrode potential (−1.63 V) compared to those of Zn (1.65 and −0.76 V) [ 21 ], which means it is more likely to oxidize than zinc and can be used as a carrier suppressor in ZnO-based TFTs.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

Hsu

Chang

et al. 2017

Nanomaterials

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Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO thin films indicated that the amount of oxygen vacancy was apparently declined with the increasing oxygen flow ratio. The fabricated TFTs showed a threshold voltage of −0.9 V, mobility of 0.884 cm2/Vs, on-off ratio of 5.5 × 105, and subthreshold swing of 0.41 V/dec.

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Control of electrical properties and gate bias stress stability in solution-processed a-IZO TFTs by Zr doping

Cited by 21 publications

References 34 publications

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

In−Zn−O Thin Films with Hydrogen Flow

Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering

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