Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

Shashkin, V. I.; Murel, A. V.; Danil’tsev, V. M.; Khrykin, O. I.

doi:10.1134/1.1478540

Cited by 38 publications

(21 citation statements)

References 7 publications

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“…In it, the measurements of the δ-doped Schottky diodes (η > 1), which are in thermodynamic equilibrium with the surrounding medium, are described. The diodes are manufactured by the team of V. I. Shashkin at the Institute for Physics of Microstructures of the Russian Academy of Sciences [12,13]. It is shown that the modified van der Ziel relation agrees with the experimental data.…”

Section: Introductionsupporting

confidence: 59%

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Description of the Spectrum of Natural Noise in Semiconductor Diodes Based on the Modified Van Der Ziel Relation

Klyuev

Шмелев

Yakimov

2015

Radiophys Quantum El

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621.391.822 In this work, we study the spectrum S iD of natural (thermal and shot) current noise of the p-n junction and the Schottky barrier in the case where their current-voltage characteristic has a nonideality coefficient η exceeding unity. The results obtained with the help of a special experimental setup are presented and explained using an equivalent scheme, which takes into account the presence of the series resistance of the diode base and contacts, as well as the possibility of existence of the leakage current. It is theoretically proven and experimentally confirmed that the van der Ziel relation S iD = 2q (I D + 2I s ), which is used for calculating the current-noise spectrum of an "ideal" junction with η = 1, cannot be used for η > 1 (here, q is the elementary charge, I D is the current across the junction, and I s is the junction saturation current). The previously obtained results are generalized using the Gupta theorem for the thermal-noise spectrum in the nonlinear resistive systems and are confirmed experimentally. It is found that the noise-current spectrum is given by the formula S iD = (2q/η) (I D + 2I s ), which is a modification of the van der Ziel relation for the case of an arbitrary value of the nonideality coefficient. The obtained formula for S iD is experimentally tested by measuring the noise spectrum of the δ-doped Schottky diode, which is in thermodynamic equilibrium with the surrounding medium.

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Section: Introductionsupporting

confidence: 59%

“…The diodes were manufactured at the Institute for Physics of Microstructures of the Russian Academy of Sciences using the same technology (see [12,13]) and differed by the initial differential resistance R 0 (with the total current I = I D + I leak = 0).…”

Section: Resultsmentioning

confidence: 99%

Description of the Spectrum of Natural Noise in Semiconductor Diodes Based on the Modified Van Der Ziel Relation

Klyuev

Шмелев

Yakimov

2015

Radiophys Quantum El

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“…For a small distance from the interface to the δ-layer the peak of a potential barrier becomes tunnel transparent and this leads to reduced effective Schottky barrier height in the range 0.7÷0.1 eV [12,13]. Metalorganic chemical vapor deposition is used for fabrication all layers, including top aluminum layer without braking growth conditions.…”

Section: Detector Principal Characteristicsmentioning

confidence: 99%

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Shashkin

Drjagin

Zakamov

et al. 2007

Int J Infrared Milli Waves

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The principles of construction of millimeter wave detectors based on low-barrier Schottky diodes and planar antennas are discussed. The modified planar slot antenna with low beam spillover at the resonant frequency of 94 GHz has been developed. Experiments have been carried out to investigate detecting characteristics of the diodes with differential contact resistances R j ¼ 1 Ä 1000 kΩ at zero bias. Experimental data are well correspond to calculations in a simple model of detector. At R j ¼ 20 Ä 100 k Ω the maximum of rf-todc voltage sensitivity -more than 10000 V/W -is obtained. At lower values of R j ¼ 2 Ä 6 k Ω a better noise equivalent power (NEP), around 10 −12 W Hz −1/2 , is predicted.

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“…The area of each barrier transition was 50 × 50 μm 2 . The lowering of the effective Schottky barrier height was achieved by surface δ-doping of the semiconductor layer by silicon [12]. The effective barrier height of the transitions amounted to 0.29 eV.…”

Section: Introductionmentioning

confidence: 99%

“…This is achieved by using MS transitions with low effective barrier height. Such a lowering of the effective barrier height can be provided by different methods, for example, by δ-doping of a semiconductor near its boundary with the metal [11], [12].…”

Section: Introductionmentioning

confidence: 99%

Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

Shashkin

Vostokov

2013

IEEE J. Electron Devices Soc.

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We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zerobias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes. IndexTerms-Metal-semiconductor-metal structure, microwave-terahertz detector, schottky (Mott)-barrier transition.

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Control of charge transport mode in the Schottky barrier by δ-doping: Calculation and experiment for Al/GaAs

Cited by 38 publications

References 7 publications

Description of the Spectrum of Natural Noise in Semiconductor Diodes Based on the Modified Van Der Ziel Relation

Description of the Spectrum of Natural Noise in Semiconductor Diodes Based on the Modified Van Der Ziel Relation

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

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