Control of Carrier Type and Density in Exfoliated Graphene by Interface Engineering

Wang, Rui; Wang, Shengnan; Zhang, Dongdong; Li, Zhongjun; Fang, Ying; Qiu, Xiaohui

doi:10.1021/nn102236x

Cited by 128 publications

(126 citation statements)

References 32 publications

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“…This hypothesis is also confirmed by the change in slope of the 52˚C acid temperature line in figure 1f after the annealing at 200 ˚C, in agreement with previous results. It is worth noting that, even though the monolayer-graphene sheet resistance in this work is comparable with the lowest reported to date, 8 it may be possible to further reduce this value by changing or pretreating the substrate 41,42,43 or by modifying the CVD graphene quality.…”

Section: Discussionsupporting

confidence: 62%

Stable, efficient p-type doping of graphene by nitric acid

et al. 2016

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We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance under vacuum annealing up to 300 ˚C. The optimized HNO 3 doping conditions yield sheet resistances as low as 180 Ω/sq, which, under vacuum annealing, is significantly more stable than previously reported values.Raman and photoemission spectroscopy show that this stable graphene doping occurs by a bimodal mechanism. At mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.2

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Section: Discussionsupporting

confidence: 62%

Stable, efficient p-type doping of graphene by nitric acid

et al. 2016

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“…According to some previous reports, theoretical limit of sheet carrier density in the case of single layer has approached ∼10 12 cm −2 . 21 This limit is expected due to the fact that the sheet carrier density is in principle, obtained by multiplying the film thickness to the bulk carrier density. 7 However, recently in doped graphene high sheet carrier concentration n ≈ 10 15 cm −2 have been reported suggesting a Fermi level pinning far apart from the Dirac point, depending on the type of carrier.…”

Section: Simulation Structurementioning

confidence: 99%

Multilayer graphene as a transparent conducting electrode in silicon heterojunction solar cells

Patel

Tyagi

2015

AIP Advances

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In this paper, the structure of a graphene/silicon heterojunction solar cell has been studied under simulated conditions. The parameters of the cell’s layers have been optimized by using AFORS-HET software. Instead of reported 2D nature, we considered graphene as 3D in nature. To ensure the formation of Schottky junction, electrical contacts were made along c-axis to collect the minority carriers, which generate upon illumination. By optimizing the various parameters of n-type multilayer graphene, we achieved the best-simulated cell with the power conversion efficiency of 7.62 % at room temperature. Up to 40 layers of n-type graphene, the efficiency found to be constant and enhanced only to 7.623 %. After further optimization of the parameters of p-crystalline silicon wafer, a maximum efficiency of 11.23 % has been achieved. Temperature dependence on the cell performance has also been studied and an efficiency of 11.38 % has been achieved at 270 K. Finally, we have demonstrated that n-type multilayer graphene can act as an excellent transparent conducting electrode.

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“…In this work, the slight differences in the mobility of graphene and PEIE coated graphene FET devices can be due to the differences in the transferred graphene that has origins in varying grain size or transfer process of CVD graphene. [ 60,61 ] [ 62 ] This is due to the chirality of the massless Dirac fermions of graphene, which suppresses backscattering by potential barriers (Klein Tunneling). [7] The PEIE thickness on the substrate can be tuned to fully control the transport behavior of the fabricated p-n-p junction.…”

Section: Electrical Data Measurementsmentioning

confidence: 99%

Formation of Air Stable Graphene p–n–p Junctions Using an Amine‐Containing Polymer Coating

Sojoudi

Baltazar

Tolbert

et al. 2014

Adv Materials Inter

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An ultrathin layer of a polymer containing simple aliphatic amine groups, polyethylenimine ethoxylated (PEIE), is deposited on a back‐gated field effect graphene device to form graphene p–n–p junctions. Characteristic I–V curves indicate the superposition of two separate Dirac points, which confirms an energy separation of neutrality points within the complementary regions. This is a simple approach for making graphene p–n–p junctions without a need for multiple lithography steps or electrostatic gates and, unlike, the destructive techniques such as substitutional doping or covalent functionalization, it induces a minor defect, if any, as there is no discernible D peak in the Raman spectra of the graphene films after creating junctions and degradation in the charge carrier mobilities of the graphene devices. This method can be easily processed from dilute solutions in environmentally‐friendly solvents such as water or methoxyethanol and does not suffer any change upon exposure to air or heating at temperatures below 100 °C.

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Control of Carrier Type and Density in Exfoliated Graphene by Interface Engineering

Cited by 128 publications

References 32 publications

Stable, efficient p-type doping of graphene by nitric acid

Stable, efficient p-type doping of graphene by nitric acid

Multilayer graphene as a transparent conducting electrode in silicon heterojunction solar cells

Formation of Air Stable Graphene p–n–p Junctions Using an Amine‐Containing Polymer Coating

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