Control Method Based on Demand Response Needs of Isolated Bus Regulation with Series-Resonant Converters for Residential Photovoltaic Systems

Abstract

Considering the effects of isolation and high efficiency, a series-resonant DC-DC converter (L-L-C type, with two inductors and a capacitor) has been introduced into a residential photovoltaic (PV) generation and storage system in this work, and a voltage gain curve upwarp drifting problem was found. In this paper, the reason of upwarp drifting in the voltage gain curve is given, and a new changing topological control method to solve the voltage regulation problem under light load conditions is proposed. Firstly, the ideal and actual first harmonic approximation (FHA) models are given, and this drifting problem is ascribed to the multiple peaks of higher-order resonance between resonant tank and parasitic capacitors. Then the paper presents the pulse-frequency-modulation (PFM) driver signals control method to translate the full-bridge LLC into a half-bridge LLC converter, and with this method the voltage gain could easily be reduced by half. Based on this method, the whole voltage and resonant current sharing control methods in on-line and off-line mode are proposed. The parameters design and optimization methods are also discussed in detail. Finally, a residential PV system platform based on the proposed parallel 7-kW full-bridge LLC converter is built to verify the proposed control method and theoretical analysis.

Extension of Zero Voltage Switching Capability for CLLC Resonant Converter

“…Therefore, a soft switching capability is important to obtain a high power conversion efficiency in a high switching frequency operation [8][9][10]. Resonant power converters, such as LC resonance, LLC resonance, CLLC resonance, and CLL resonance, can implement the soft switching capability by the resonance, which can be a good candidate to implement the high switching frequency operation [11][12][13][14][15]. In addition, the wide band-gap device (WBD), such as gallium nitride (GaN) and silicon carbide (SiC), can increase the switching frequency up to several MHz compared with conventional silicon (Si)-based switching devices [16][17][18][19].…”