1976
DOI: 10.1016/0022-4596(76)90093-1
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Contributionàl'étude du système formépar l'étain, le soufre et l'iode. Mise enévidence des deux variétés de l'iodosulfure stanneux Sn2SI2: Comportement thermique etétude structurale

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Cited by 13 publications
(14 citation statements)
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“…17 Unlike its quaternary counterparts, Sn 2 SI 2 is predicted to be an indirect band gap semiconductor. 38,39 Diffuse reflectance measurements reveal a band of 1.96 eV (633 nm) for the monoclinic (C2/m) Sn 2 SI 2 polymorph (see the SI). For the orthorhombic (Pnma) polymorph, the band gap gradually red shifts from 2.11 to 1.92 eV (588−646 nm) as the concentration of SnI 2 used in the synthesis increases (Figure 4).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…17 Unlike its quaternary counterparts, Sn 2 SI 2 is predicted to be an indirect band gap semiconductor. 38,39 Diffuse reflectance measurements reveal a band of 1.96 eV (633 nm) for the monoclinic (C2/m) Sn 2 SI 2 polymorph (see the SI). For the orthorhombic (Pnma) polymorph, the band gap gradually red shifts from 2.11 to 1.92 eV (588−646 nm) as the concentration of SnI 2 used in the synthesis increases (Figure 4).…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…There are no entries in the ICSD for most of the candidates that we identified; however, reports can be found for Cd 2 O 6 I 2 , Sn 2 SI 2 , and Zn 6 S 5 Cl 2 . 34 , 35 , 36 Both Cd 2 O 6 I 2 and Sn 2 SI 2 feature in the Materials Project and have band gaps of 3.3 and 1.6 eV, respectively, calculated within density functional theory (DFT). These compare with the SSE band gaps of 2.5 and 2.0 eV.…”
Section: Resultsmentioning
confidence: 99%
“…Wie neue Untersuchungen zeigen, existiert im System SnS-SnI2 neben a-und /?-Sn2SI2 [1][2][3][4] als weitere ternäre Verbindung S114SI6 ("SnS-3SnI2"). Dies steht im Gegensatz zu den Angaben von Thevet et al [2], die die Existenz weiterer ternärer Verbindungen neben a-und /?-Sn2SI2 ausschließen.…”
unclassified
“…Dies steht im Gegensatz zu den Angaben von Thevet et al [2], die die Existenz weiterer ternärer Verbindungen neben a-und /?-Sn2SI2 ausschließen. Dagegen fanden Novoselova et al [5] bei der Untersuchung des SnS-SnI2-Systems zwar zwei Phasen unterschiedlicher Zusammensetzung, geben hierfür aber die Formeln S113SI4 ("SnS • 2 Snl2") und Sn7S3I8 ("3 SnS • 4 Snl2") an.…”
unclassified
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