Contribution of ultrasonic traveling wave to chemical–mechanical polishing

Li, Liang; He, Qiang; Zheng, M.Y.; Liu, Zheng

doi:10.1016/j.ultras.2014.10.006

Cited by 22 publications

(10 citation statements)

References 21 publications

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“…Therefore, the material removal behavior of different polishing processes has gained the attention of several researchers. [7][8][9][10][11][12][13][14][15][16][17][18][19][20] Suratwala et al 7,8 observed non-uniform distribution of pressure over the polished surface of fused silica glass and also reported material removal mechanism by analyzing the load acting on the individual particles. Belkhir et al 9 reported that the frictional behavior and the shape of glass surface gets affected by the pressure distribution on contact surface, which further influences the material removal during the process.…”

Section: Introductionmentioning

confidence: 99%

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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The present experimental investigation attempts to understand and address the effect of ultrasonic vibrations on material removal in the polishing of silicon wafers (1 0 0). The requisite finishing experimentations were performed on an indigenously developed experimental arrangement of double-disc chemical assisted magnetorheological finishing (DDCAMRF) process with longitudinal vibrations. The MR fluid used in the experiments consists of a water-based suspension prepared by mixing suitable amounts of carbonyl iron particles (CIPs), abrasive particles, and additives or stabilizers. The prepared MR fluid uses both mechanics and chemistry to finish the silicon surface. Mechanics is mainly responsible for micro-scratching of silicon surface, which gets “softened” by hydration utilizing DI water in the MR fluid. In this study, the ‘response surface methodology (RSM)’ was chosen for designing the experiments to evaluate the significance of different process factors, namely polishing speed, abrasive concentration, and ultrasonic power on the material removal rate (MRR) in DDCAMRF process. The material removed from the wafer surface was measured using the precision digital weighing balance. It was observed that the MRR was found to increase with the increase in various process factors used. Further, analysis of variance (i.e., ANOVA) technique with a 95% confidence interval was performed to analyze the significant contribution of different process factors on MRR. The validation of developed model was done by performing experiments on random and optimized set of process factors. From, the statistical investigation it was discovered that ultrasonic power has highest contribution of 57.9% on MRR, followed by the polishing speed (13.3%), and abrasive concentration (12.5%). Furthermore, a genetic algorithm optimization tool was utilized to obtain optimum set of process parameters to maximize MRR.

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Section: Introductionmentioning

confidence: 99%

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Srivastava

Pandey

2021

Proceedings of the Institution of Mechanical Engineers, Part C:

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“…Through computation and analysis, it shows that the lower polishing force and relative lower speed as well as the higher vibration frequency and amplitude could result in a lower surface roughness and less polishing marks of micro cylindrical surface on SiC. Li et al 11 investigated the effect of the ultrasonic vibration on the chemical-mechanical polishing. They established the model of the chemical-mechanical polishing with the assisted ultrasonic vibration in order to understand the contribution of the ultrasonic vibration to chemical-mechanical polishing in detail.…”

Section: Introductionmentioning

confidence: 99%

Ultrasonic dispersion method used in glass polishing experiment

Chu

Wang

et al. 2021

Advances in Mechanical Engineering

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To solve the problems of low processing efficiency and poor glass surface quality when using rare earth polishing powder to grind super-hard K9 glass. The potential, phase structure, surface morphology, and particle size distribution of the nano-rare earth polishing powder were characterized. Compare the evaluation indexes such as polishing efficiency, surface morphology, and contact angle after the polishing process is changed. The results of the comparative study show that the average surface roughness of the glass after heating ultrasonic polishing process is 0.9064 nm, the polishing rate reaches 0.748 μm/min, the average surface roughness of the glass without heating ultrasonic polishing process is 1.3175 nm, and the polishing rate reaches 0.586 μm/min, the ultrasonic assisted polishing process is superior to the conventional polishing process. The heating ultrasonic method provides experimental basis for precise and rapid processing.

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“…Lu et al [ 16 , 17 ] increased the MRR, lowered the surface roughness, and improved the surface flatness for a sapphire substrate by virtue of ultrasonic flexural vibration assisted CMP with a self-designed flexural vibrating plate. Li et al [ 18 , 19 ] made experimental studies on ultrasonic and megasonic vibration assisted CMP for silicon wafers and the results implied a better effect than CMP without ultrasonic. Liu et al [ 20 ] also had a study on the elliptical vibration-aided CMP of monocrystalline silicon, where a mathematical model of MRR and the experimental verification were performed.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Shi

et al. 2018

Materials

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A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

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Contribution of ultrasonic traveling wave to chemical–mechanical polishing

Cited by 22 publications

References 21 publications

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

The influence of ultrasonic vibrations on material removal in the silicon wafer polishing using DDCAMRF: Experimental investigations and process optimization

Ultrasonic dispersion method used in glass polishing experiment

Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

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