Contrasting Thermoelectric Transport Properties of n-Type PbS Induced by Adding Ni and Zn

Abstract

Introducing small metallic atoms is an effective approach to enhance thermoelectric performance. In this research, we investigate the impacts of Ni and Zn on the thermoelectric performance of n-type PbS. We find that adding Ni is superior to that of Zn. Both experimental and theoretical results show that the extra Ni could bring a new impurity level among the Fermi energy, thus the electrons can be easily excited from defect states, leading to enhanced carrier mobility. Above all, adding Ni can boost the thermoelectric performance of n-type PbS dramatically. A peak ZT value at 823 K and a ZT ave value of Pb0.995In0.005S + 5% Ni were achieved as ∼1.0 and ∼0.66, respectively.

Realizing thermoelectric cooling and power generation in N-type PbS0.6Se0.4 via lattice plainification and interstitial doping

“…3b . Comparing the κ lat of our PbS 0.6 Se 0.4 sample with other reported lead chalcogenide materials, the PbS 0.6 Se 0.4 shows a relatively low κ lat , especially at room temperature 37 , 42 – 44 , 46 – 49 (Supplementary Fig. 3c ).…”

“…Finally, because of the improvement in TE performance at room temperature, the ZT ave of our sample reaches ~0.92 at the temperature range of 300-823 K, as depicted in Fig. 5f, which is the highest ZT ave among PbS-based material systems 21,[37][38][39][40][41][42][43][44][45][46] .…”

“…Nevertheless, because of the inferior TE performance at low temperature, for a long time, PbS was thought to be a medium-temperature thermoelectrics that can only operate at relatively high temperature. The investigation of its room temperature TE performance has long been neglected 21 , and the PbS had never been considered as a feasible TE cooling material 21,[37][38][39][40][41][42][43][44][45][46] .…”

Enhanced average power factor and ZT value in PbSe thermoelectric material with dual interstitial doping

“…[11][12][13] It is reported that the strategy of interstitial doping in thermoelectric materials can synergistically optimize electrical and thermal transport properties and even decouple the carrier and phonon transport due to their large different mean free paths. 14,15 In PbQ (Q = Te, Se and S) compounds, Zn, 16,17 Ni, 17,18 Cu [19][20][21] and Ag 22 atoms can form interstitials in the matrix lattice. These sub-nanoscale interstitials could intensify the phonon scattering to decrease lattice thermal conductivity due to the comparable size with the phonon mean free path, while simultaneously maintaining carrier transport because of a much larger carrier mean free path.…”

Dual Interstitials Doping to Advance PbSe Thermoelectric at Wide Temperatures

“…It is reported that the strategy of interstitial doping in thermoelectric material can synergistically optimize electrical and thermal transport properties, and even decouple the carrier and phonon transport due to large difference in mean free paths. 19,20 In PbQ (Q = Te, Se and S) compounds, Zn, 21,22 Ni, 22,23 Cu [23][24][25][26] and Ag 27 atoms can form interstitials in matrix lattice. These sub-nanoscale interstitials could intensify the phonon scattering to decrease lattice thermal conductivity due to the comparable size with phonon mean free path, while simultaneously maintaining carrier transport because of much larger carrier mean free path.…”