In search for a new generation of spintronics hardware, material candidates for room temperature quantum spin Hall effect (QSHE) have become a contemporary focus of investigation. Inspired by the original proposal for QSHE in graphene, several heterostructures have been synthesized, aiming at a hexagonal monolayer of heavier group IV elements promoting the QSHE bulk gap via increased spin-orbit coupling. So far, the monolayer/substrate coupling, which can manifest itself in strain, deformation, and hybridization, has proven to be detrimental to the aspired QSHE conditions for the monolayer. For stanene, the Sn analogue of graphene, we investigate how an interposing buffer layer mediates between monolayer and substrate in order to optimize the QSHE setting. From a detailed density functional theory study, we highlight the principal mechanisms induced by such a buffer layer to accomplish quasi-freestanding stanene in its QSHE phase. We complement our theoretical predictions by presenting the first attempts to grow a buffer layer on SiC (0001) on which stanene can be deposited. arXiv:1807.09006v2 [cond-mat.mtrl-sci] 6 Nov 2018 E = 40 eV Caption of figure: LEED image of Al-( 3× 3)R30°on Si-terminated 4H-SiC(0001) recorded with an electron energy of 40 eV. The dashed hexagonal Brillouin zones in red and blue highlight the Al induced ( 3× 3) and (1×1) spots, respectively.