Continuous‐Wave Pumped Perovskite Lasers

Abstract

Continuous‐wave (CW) operated lasers are regarded as a stepping stone to the development of electrically driven lasers and crucial for practical application in high‐density integrated optoelectronic devices. Recently, metallic halide perovskites are demonstrated as excellent gain materials for CW lasers owing to their large optical absorption coefficient, low defect density, long diffusion length, and suppressed Auger recombination rate. Here, the latest research advances on CW pumped perovskite lasers are reviewed. First, the recent research advances on CW lasing in perovskite thin film are highlighted. Then, CW lasing in CsPbBr3 perovskite nanowires is briefly introduced. The comparison of lasing thresholds in CW perovskite lasers is made and discussed. Finally, the importance of such perovskite CW lasers is emphasized, while a perspective on the potential opportunities and remaining challenges of perovskite‐based CW lasers is proposed.

High Optical Gain of Solution‐Processed Mixed‐Cation CsPbBr3 Thin Films towards Enhanced Amplified Spontaneous Emission

“…The as-demonstrated net optical gain coefficient of CsFAMA/NMA 0.8 is the highest value among perovskite materials, and it is nearly one order of magnitude higher than that of the solution-process CsPbBr 3 thin films, and three times higher than that of single-crystalline CsPbBr 3 nanocrystal films (Table S1 and S2, Supporting Information). [22,23,46] Notably, the NMA cation could also optimize the ASE performance of pure FAPbBr 3 film with a lower threshold and enhanced net optical gain (Figure S17, Supporting Information). Further, the loss coefficient α of the CsFAMA/NMA 0.8 film was also measured by detecting the ASE intensity as a function of the distance.…”

“…[11][12][13][14] So far, several studies have reported on the usage of low-threshold photoluminescence (PL) lasing in single-crystalline bulk and low-dimensional CsPbBr 3 . [15][16][17][18][19][20][21][22][23] However, the mass fabrication and integration of these structures, and thus lasing devices, are very challenging for practical optoelectronic applications. Although solution-processed spin-coated thin films could resolve this problem, the amplified spontaneous emission (ASE)/lasing devices of these films suffer from high threshold owing to poor crystallinity as a result of low solubility of cesium bromide (<<0.1 mol L −1 ) and insufficient optical gain.…”

Perovskite quantum dot lasers

“…Lead halide perovskite nanocrystals (NCs) have garnered recent attention because of their unique versatility as laser gain materials, such as high photoluminescence quantum yields (PLQYs), an easy synthesis process, and a tunable bandgap with different elements . The molecular formula of the perovskite crystal can be expressed as ABX 3 , where cation A and cation B are bound to anion X.…”

A switchable multimode microlaser based on an AIE microsphere

“…Miniaturized lasers have gained increasing interest owing to their applications in chemical and biological sensing, [1][2][3][4] laser display, [5][6][7] imaging 8 , and on-chip optical interconnects [9][10][11][12] . Wavelength-tuneable lasers with the capability of delivering intense coherent light signals across broad spectral range open up particularly interesting opportunities for highly integrated photonic devices.…”