Abstract-Loss between elements of coherently coupled vertical-cavity surface-emitting laser (VCSEL) arrays typically causes out-of-phase operation with on-axis intensity nulls in the far-field. We show that in-phase evanescently coupled VCSEL arrays may be defined by proton implantation. An advantage for implanted in-phase coherently coupled VCSEL arrays is that this approach employs a simple and reliable fabrication process where the absence of loss between elements leads to in-phase coupling. We present data for 2, 3, and 4 element in-phase implant-defined coherently coupled VCSEL arrays.
Index Terms-Coherent arrays, vertical-cavity surface-emitting laser (VCSEL).A RRAYS OF vertical-cavity surface-emitting lasers (VCSELs) have been studied extensively for coherent optical coupling between lasers [1]- [11]. Coherent coupling allows for increased power in the far-field at a single frequency, which may be used in applications such as optical logic, image processing, and beam steering. Because of the optical loss between evanescently coupled VCSELs, a phase shift of 180 is typically observed between neighboring lasers [1]. Previous work with implanted VCSEL arrays specifically included elements of optical loss such as an air gap [2] or metal [3]- [7] between lasers. These geometries create an out-of-phase array mode with an on-axis null in the far-field which is undesirable for most applications. Phase-adjusted arrays [8] and anti-guided VCSELs [9], [10] can bypass or compensate for this mode at the cost of a complicated fabrication process. It is also possible to achieve in-phase coupling with photonic crystal VCSELs, however, the hole(s) between lasers frequently promote the out-of-phase mode [11]-[13].In this work, we show that proton implantation isolation in the top distributed Bragg reflector of VCSELs emitting at nominally 850 nm may be used to define individual elements in the array. The implantation pixelates the gain region without adding optical loss between neighboring lasers. One of the main attractions of these arrays is that there is no additional fabrication complexity to that of a conventional implant-defined VCSEL [14]. The devices studied have 27 top distributed Bragg reflector (DBR) periods, 35 bottom DBR periods, and GaAs quantum wells to provide gain. A cross-sectional sketch of this device is shown in Fig. 1. To begin, a thick resist process is used to define the round, unimplanted regions inside the contact ring of each VCSEL. The energy and dose of the proton-implantation were 340 keV and cm , respectively. The wafer was tilted at 7 from normal during implantation to prevent channeling. Following implantation, a standard VCSEL fabrication process is followed.Data from three array geometries are presented: a 2 1 array with 5.3 m diameter implant apertures at a center to center pitch of 9.3 m, a 3-element array with 6.3 m diameter implant apertures at a pitch of 9.5 m in a triangular arrangement, and a 2 2 array with 5.0 m diameter apertures at a pitch of 9.0 m. These dimensions correspond ...