Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Kuramoto, Masaru; Sasaoka, Chiaki; Hisanaga, Y.; Kimura, Akitaka; Yamaguchi, Atsushi; Sunakawa, Hajime; Kuroda, Naotaka; Nido, M.; Usui, Akira; Mizuta, Masahiro

doi:10.1002/(sici)1521-396x(199911)176:1<35::aid-pssa35>3.0.co;2-2

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Also, the fabrication process used to mass-produce these LDs will have to be simple and reliable, and thus inexpensive. We have recently achieved room-temperature continuous operation of high-performance InGaN multi-quantum-well (MQW) laser diodes (LDs) in the context of solving the above-mentioned problems [3,4], for which the MQW laser structure was grown on the Facet-Initiated Epitaxial Lateral Overgrowth (FIELO)-GaN substrate and n-contact was made at the backside of substrate. This was made possible by introducing an important new concept of reducing threading dislocations (FIELO) during the growth of the GaN substrates.…”

mentioning

confidence: 64%

CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN Substrates

Mizuta

2000

phys. stat. sol. (a)

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The continuous-wave operation at room temperature has been demonstrated for InGaN multiquantum-well (MQW) laser diodes (LDs) grown on FIELO-GaN substrates with a backside n-contact. This was made possible by introducing an important new concept of reducing threading dislocations (FIELO) during the growth of GaN substrate. InGaN active layers grown on FIELOGaN have been characterized to be far more superior than those grown on conventional sapphire substrate in terms of growth mode and resultant indium compositional fluctuation. The laser diode fabricated shows internal quantum efficiency as high as 98%.Introduction Short-wavelengths in the region of blue to violet coherent light source will enable us to double or triple the capacity of the current optical storage system if only replacing the red laser diodes (LDs) now used. This increase in capacity together with a faster transfer speed is strongly demanded in conjunction with the explosive development of recent and future internet communication society. The InGaN materials system is the strongest candidate as a blue/violet coherent light source as shown by the pioneering work of Nakamura et al. [1,2] who have recently reported a lifetime of over 10000 h [2] for a low-power InGaN MQW laser. Although this material system has a strong potential for commercial use in blue/violet LDs, however, there are still inherent problems to be solved before mass-productive devices will be practical. These problems include lack of an appropriate substrate for growing the laser structure that is suitable for mass-production processes, an unstable In compositional distribution in the active layer that depends on the growth conditions, difficulty in obtaining a beam quality appropriate for optical-disk systems that include single-horizontal-mode operation. Also, the fabrication process used to mass-produce these LDs will have to be simple and reliable, and thus inexpensive. We have recently achieved room-temperature continuous operation of high-performance InGaN multi-quantum-well (MQW) laser diodes (LDs) in the context of solving the above-mentioned problems [3,4], for which the MQW laser structure was grown on the Facet-Initiated Epitaxial Lateral Overgrowth (FIELO)-GaN substrate and n-contact was made at the backside of substrate. This was made possible by introducing an important new concept of reducing threading dislocations (FIELO) during the growth of the GaN substrates. We found that InGaN active layers grown on FIELO-GaN are superior to those grown on conventional sapphire substrates in terms of their growth mode and the resultant In compositional fluctuation. In this paper, growth and characterization of FIELO-GaN substrate is briefly described followed by optical characterization of InGaN epitaxial layers on FIELO as compared

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confidence: 64%

CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN Substrates

Mizuta

2000

phys. stat. sol. (a)

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“…Compositions, functions, thicknesses and doping levels of all structure layers as well as their laser-axis values of refractive indices and extinction coefficients determined for the RT threshold-operating device. Numerical data are taken from Palik (1985), Bergmann and Casey (1998), Katoh et al (1998), Kuramato et al (1999), Chung et al (2000) and Kuroda and Takeuchi (2000).…”

Section: The Modelmentioning

confidence: 99%

Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers

Tomczyk¹,

Sarzała²,

Czyszanowski³

et al. 2004

Semicond. Sci. Technol.

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A comprehensive, fully self-consistent, optical-electrical-thermal gain, three-dimensional model of edge-emitting nitride diode lasers has been generalized to simulate a room temperature (RT) continuous-wave (CW) threshold operation of possible designs of a one-dimensional array of these lasers. Nitride A III N materials exhibit higher thermal conductivities than arsenide A III As ones. Nevertheless, an operation of possible nitride arrays has been surprisingly found to be more influenced by thermal interactions between their emitters than in arsenide ones. Therefore, emitters in nitride arrays should be arranged more sparsely to enable their efficient RT CW operation.

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“…Table 2 summarizes the deduced differential gains and device parameters used to calculate the differential gain for each sample. The internal optical loss was measured by the dependence of the external quantum efficiency on the cavity length [12], and the optical confinement factor was calculated by solving the Maxwell equations. The estimated differential gains of samples A, B and C were 120 × 10 −18 , 150 × 10 −18 and 50 × 10 −18 cm 2 , respectively.…”

Section: Differential Gain and In Fluctuationmentioning

confidence: 99%

An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation

Kuramoto¹,

Hisanaga²,

Kimura³

et al. 2001

Semicond. Sci. Technol.

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Differential gain and carrier lifetime have been deduced experimentally for InGaN MQWs having different magnitudes of In compositional fluctuation and defect density in the active layer. It has been found that the compositional fluctuation and differential gain show a strong correlation in full accordance with the theoretical model for a band-tail modified by In compositional fluctuation as described in the companion paper (part I). Several laser characteristics, threshold current density, differential gain and response time, were found to be affected by the compositional fluctuation and defect density. The optimization of these growth parameters for producing high-performance blue-violet InGaN MQW LDs is also discussed.

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Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Cited by 5 publications

References 9 publications

CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN Substrates

CW Operation of (In,Ga)N MQW Laser Diodes on FIELO-GaN Substrates

Fully self-consistent threshold model of one-dimensional arrays of edge-emitting nitride diode lasers

An alloy semiconductor system with a tailorable band-tail and its application to high-performance laser operation: II. Experimental study on InGaN MQW laser for optimization of differential gain characteristics tuned by In compositional fluctuation

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