Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 127 to 141  μm

Liu, Xiu; Wang, Lijuan; Fang, Xuan; Zhou, Taojie; Xiang, Guohong; Xiang, Boyuan; Xue-qing, Chen; Hark, S. K.; Liang, H.; Wang, Shumin; Zhang, Zhaoyu

doi:10.1364/prj.7.000508

Cited by 7 publications

(3 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ 28 ] The key development since that publication has been a new GaAsBi lasing wavelength record set by an optically pumped microdisk GaAsBi laser. [ 57 ] It can be seen from Table 1 that MOVPE can produce lasers with lower threshold current densities than are achievable with MBE. However, at growth temperatures significantly below 400 °C, as required for Bi fractions greater than ≈4% (see Figure 7), the surface chemical reactions necessary for MOVPE to proceed are unable to occur.…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

“…In 2019, the low‐frequency of noise characteristics of GaAsBi ([Bi] = 8%) were investigated by Glemža et al [ 64 ] To date, the longest optically pumped lasing wavelength is 1407 nm, reported by Liu et al in 2019, with a 5.8% Bi content. [ 57 ] This laser used a microdisk structure, which has great potential for application in modern photonic integration compared with the Fabry–Perot‐based design. The properties of GaAsBi laser are summarized in Table 1.…”

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

See 1 more Smart Citation

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

View full text Add to dashboard Cite

GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

show abstract

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

Section: Recent Progress On Gaasbi Devicesmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…In 2019, the low-frequency of noise characteristics of GaAsBi ([Bi] = 8 %) were investigated by Glemža et al [64] To date, the longest optically pumped lasing wavelength is 1407 nm, reported by Liu et al in 2019, with a 5.8 % Bi content. [57] This laser used a microdisk structure, which has great potential for application in modern photonic integration compared to the Fabry-Perotbased design. The properties of GaAsBi laser are summarized in Table 1.…”

Section: Figurementioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2022

Physica Status Solidi (b)

View full text Add to dashboard Cite

GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi-induced localized states induce a rapid rising of the valence band edge through a band anti-crossing interaction, which has a profound effect on the band gap and the spin orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress towards many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. In this review, we present an overview of the applications for which GaAsBi has been advocated and the key results in these areas. We then explore the molecular beam epitaxy growth and post-growth processing of GaAsBi and the novel techniques that have been suggested to improve material quality. IntroductionReceived: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

show abstract

GaAsBi Quantum Dots for 1.55 μm Laser Diode

Zhang

et al. 2021

Electron. Mater. Lett.

View full text Add to dashboard Cite

Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 127 to 141 μm

Cited by 7 publications

References 34 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi Quantum Dots for 1.55 μm Laser Diode

Contact Info

Product

Resources

About