Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolar<i>m</i>-Plane Gallium Nitride

Kubota, Masashi; Okamoto, Kuniyoshi; Tanaka, Taketoshi; Ohta, Hiromichi

doi:10.1143/apex.1.011102

Cited by 61 publications

(47 citation statements)

References 26 publications

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“…Therefore, further systematic studies will be required to clearly explain the origin of the different indium uptake on the two polar opposite planes. [17,18]. Figure 2 shows the dependence of the sub-threshold electroluminescence peak wavelength on current density for the (303 1) LD (published c-plane and m-plane devices are included for comparison) [17,18].…”

Section: Results and Analysismentioning

confidence: 99%

“…[17,18]. Figure 2 shows the dependence of the sub-threshold electroluminescence peak wavelength on current density for the (303 1) LD (published c-plane and m-plane devices are included for comparison) [17,18]. In the 0.1 to 1 kA/cm 2 current density range, the blue-shift of the (303 1) LD is shown to be comparable to that of the m-plane LD emitting at 457 nm and much smaller than that of the cplane LD emitting at 470 nm.…”

Section: Results and Analysismentioning

confidence: 99%

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Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates

Hsu

Sonoda

Kelchner

et al. 2011

Phys. Status Solidi C

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We demonstrate the first blue AlInGaN‐based laser diodes (LDs) grown on semipolar (33$ \bar 3 \bar 1 $) free‐standing GaN substrates. Etched facet ridge waveguide LDs were fabricated and tested under pulsed operation. Lasing was achieved at 477.5 nm with a threshold current density of 12.2 kA/cm2. The peak electroluminescence wavelength was shown to blue‐shift from approximately 494 nm to 477 nm upon reaching threshold. Initial experimental data also show the (33$ \bar 3 \bar 1 $) plane to have higher indium incorporation efficiency than the (33$ \bar 3 \bar 1 $) plane, suggesting that (33$ \bar 3 \bar 1 $) GaN substrates may be more suitable for growth and fabrication of long‐wavelength AlInGaN‐based LDs than (33$ \bar 3 \bar 1 $) GaN substrates. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Results and Analysismentioning

confidence: 99%

Section: Results and Analysismentioning

confidence: 99%

Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates

Hsu

Sonoda

Kelchner

et al. 2011

Phys. Status Solidi C

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“…This results in a displacement of electron and hole wavefunctions in quantum well structures leading to lower recombination efficiency and an emission wavelength shift with drive current [3]. Thus, the growth with other orientations such as (11-20) (a-plane) and (1-100) (m-plane) is a promising alternative for the development of highly efficient lasers and LED [4,5]. Recent studies have also indicated that such structures can incorporate higher Mg concentrations enabling increased p-type doping levels [6].…”

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confidence: 99%

Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates

Mauder¹,

Wang²,

Reuters³

et al. 2010

phys. stat. sol. (b)

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We used metal organic vapour phase epitaxy (MOVPE) to deposit m-plane GaN layers on LiAlO 2 substrates and studied the influence of the V/III ratio during growth. All films exhibit a special surface pattern with pyramidal hillocks elongated in [11][12][13][14][15][16][17][18][19][20] direction of GaN and small steps perfectly aligned in the (11-20) plane. For higher V/III ratios, the roughness is reduced while holes on the surface are generated. Polarizationdependent low-temperature (LT) photoluminescence (PL) spectra show GaN excitonic peaks at $3.5 eV with a high degree of polarization (DoP) of $0.9. Another peak at 3.47 eV is much less intense compared to the excitonic peak and probably related to basal plane stacking faults (BSF).Anisotropic in-plane compressive strain which slightly relaxes for a higher V/III ratio can be detected by high-resolution X-ray diffraction (HRXRD). XRD reciprocal space maps of the symmetric (1-100) reflection show relatively weak broadening for scans taken in the [0001] direction and strong broadening for the perpendicular direction. Anisotropic room temperature electron mobilities are found with average values of 108 and 117 cm 2 /Vs in [11][12][13][14][15][16][17][18][19][20] and [0001] direction of GaN, respectively. We explain the higher values in c-axis direction by the presence of extended planar defects in the prism plane which may be also responsible for the observed surface steps and anisotropic broadening of the XRD RSM.

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“…Blue-violet and pure blue LDs on nonpolar (m-plane) substrates have already been fabricated [2][3][4][5]. However, there is a problem concerning their polarization properties.…”

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confidence: 99%

“…This stripe direction automatically requires using c-plane facets as cavity mirrors. Although the c-face mirrors were fabricated by cleavage or dry-etching techniques in the previous studies [2][3][4][5], we believe that m-face or a-face mirrors, satisfying the charge neutrality condition, can be formed much more easily by cleavage, and that high quality and low cost LDs can be realized using such easily cleaved facet mirrors. It has been theoretically proposed that the present undesirable polarization properties can be corrected using AlGaN substrates [6].…”

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Polarization control of nonpolar‐oriented InGaN quantum‐well emission by utilizing (Al)InGaN alloy substrates

Yamaguchi

2009

Phys. Status Solidi (c)

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The polarization properties of InGaN quantum wells on nonpolar AlInGaN alloy substrates are calculated numerically using the 6×6 k·p Hamiltonian. It is shown that the polarization direction of quantum‐well emission changes, depending on the substrate alloy composition and quantum well width, and that these polarization switches are caused by the strain anisotropy and quantum confinement effects in the quantum wells. The calculations indicate that the utilization of InGaN or AlInGaN alloy substrates can be beneficial in obtaining desirable polarization properties for the formation of cleaved‐facet cavity mirrors in laser diodes on nonpolar substrates. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

Cited by 61 publications

References 26 publications

Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates

Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates

Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates

Polarization control of nonpolar‐oriented InGaN quantum‐well emission by utilizing (Al)InGaN alloy substrates

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