Continuous-Wave (CW) operation of GaInP-AlGaInP visible compressively strained multiple quantum-wire (CS-WQWR) lasers

Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

“…͑Self-organized QWR lasers with the SILO process demonstrated RT oscillation in 1995͒. 6 These results show that the ͑775͒B QWRs have high potential for application to optical devices. The wavelength of the ͑775͒B QWR laser, however, was about 760 nm at RT, which is too short to apply these ͑775͒B QWRs to vertical cavity surface emitting lasers ͑VCSELs͒ with a GaAs/AlAs vertical cavity.…”

“…7 The density of the ͑775͒B QWRs 7 was 8ϫ10 5 QWRs/cm, which is higher than any other selforganized QWRs with surface corrugation grown on vicinal substrates ever reported. [8][9][10][11] ͑The density of the QWRs fabricated by the strain-induced lateral-layer ordering ͑SILO͒ process 5 was as high as 1ϫ10 6 QWRs/cm.͒ The full width at half maximum ͑FWHM͒ of a photoluminescence ͑PL͒ peak observed for the ͑775͒B GaAs/͑GaAs͒ 4 ͑AlAs͒ 2 QWRs 12 was as small as 15 meV at 14 K, indicating their high uniformity. In 1998, we fabricated stripe-contact graded index separate confinement heterostructure ͑GRIN-SCH͒ lasers with the self-organized ͑775͒B GaAs/͑GaAs͒ 4 ͑AlAs͒ 2 QWRs structure grown on a Si-doped ͑775͒B GaAs substrate by MBE, 1,2 for the first time, which oscillated at 20°C with the threshold current density of 1.8 kA/cm 2 .…”

Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth

“…[5][6][7][8][9][10][11][12] Among several fabrication methods reported, we have been employing a fabrication method using electron beam lithography (EBL) and etching techniques followed by an embedding growth using organometallic vapor phase epitaxy (OMVPE), 13,14) because it can be applied to fabrication of various lowdimensional quantum structures based on biaxially strained quantum-well structures. A room temperature continuouswave operation of GaInAsP/InP quantum-wire lasers fabricated by this method was reported, 6,7) where a small blue shift of the emission wavelength was observed, however clear evidence of the lateral quantum confinement effect was not reported.…”

Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy

“…[1][2][3][4] For example, semiconductor lasers with selforganized QWRs and QDs in their active regions have been realized. [5][6][7] Among several approaches to fabricate QWR structures, self-organization using step-bunching growth mode is one of the most promising methods because of high density, high optical quality, and easy fabrication. We have reported highly uniform InGaAs and GaAs QWR structures grown on the ͑775͒B-oriented GaAs substrate by molecular beam epitaxy ͑MBE͒.…”