Continuous orientated growth of scaled single-crystal 2D monolayer films

Han, Zhongyuan; Jiao, Fei; Yu, Gui; Wei, Zhongming; Geng, Dechao; Hu, Wenping

doi:10.1039/d1na00545f

Cited by 5 publications

(4 citation statements)

References 133 publications

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“…In such configuration, a common situation is that the grains cover a fraction of the substrate 0.1. The inspection of microscopy images with visible and isolated islands (grains) of 2D materials supports this estimate [1,42,43,44,45,46]. Instead, with coverages ∼ 1, coalescence of several islands may be observed.…”

Section: Possible Application To 2d Materials Growthmentioning

confidence: 52%

Growth at high substrate coverage can decrease the grain boundary roughness of 2D materials

Reis¹,

Marguet²,

Pierre-Louis³

2022

Preprint

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Grain boundary roughness can affect electronic and mechanical properties of two-dimensional materials. This roughness depends crucially on the growth process by which the two-dimensional material is formed. To investigate the key mechanisms that govern the roughness, we have performed kinetic Monte Carlo simulations of a simple model that includes particle attachment, detachment, and diffusion. We have studied the closure of the gap between two flakes during growth, and the subsequent formation of the grain boundary (GB) for a broad range of model parameters. The well known nearequilibrium (attachment-limited) and unstable (diffusion-limited) growth regimes are identified, but we also observe a third regime when the precursor flux is sufficiently high to fully cover the gap between the edges. This high coverage regime forms GBs with spatially uncorrelated roughness, which quickly relax to smoother configurations. Extrapolating the numerical results (with support from a theoretical approach) to edge lengths and gap widths of some micrometers, we confirm the advantage of this regime to produce GBs with minimal roughness faster than near-equilibrium conditions. This suggests an unexpected route towards efficient growth of two-dimensional materials with smooth GBs.

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Section: Possible Application To 2d Materials Growthmentioning

confidence: 52%

Growth at high substrate coverage can decrease the grain boundary roughness of 2D materials

Reis¹,

Marguet²,

Pierre-Louis³

2022

Preprint

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show abstract

“…In such configuration, a common situation is that the grains cover a fraction of the substrate ≲0.1. The inspection of microscopy images with visible and isolated islands (grains) of 2D materials supports this estimate [1,[50][51][52][53][54]. Instead, with substrate coverages ∼1, coalescence of several islands are observed.…”

Section: Possible Application To 2d Materials Growthmentioning

confidence: 54%

Formation of smoother grain boundaries in 2D materials using high deposition rates during the last stages of growth

Reis¹,

Marguet²,

Pierre-Louis³

2022

2D Mater.

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Grain boundary roughness can affect electronic and mechanical properties of two-dimensional materials. This roughness depends crucially on the growth process by which the two-dimensional material is formed. To investigate the key mechanisms that govern the roughness, we have performed kinetic Monte Carlo simulations of a simple model that includes particle attachment, detachment, and diffusion. We have studied the closure of the gap between two flakes during growth, and the subsequent formation of the grain boundary (GB) for a broad range of model parameters. The well known near-equilibrium (attachment-limited) and unstable (diffusion-limited) growth regimes are identified, but we also observe a third regime when the precursor flux is sufficiently high to saturate the gap between the edges with diffusing species. This high deposition rate regime forms GBs with spatially uncorrelated roughness, which quickly relax to smoother configurations. Extrapolating the numerical results (with support from a theoretical approach) to edge lengths and gap widths of some micrometers, we confirm the advantage of this regime to produce GBs with minimal roughness faster than near-equilibrium conditions. This suggests an unexpected route towards efficient growth of two-dimensional materials with smooth GBs.

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“…Morphology engineering of 2D materials involves deliberate manipulation and control of their structural characteristics, such as size, shape, orientation, 201 and surface features, 202,203 to tailor and optimize the structural characteristics of these materials to achieve desired properties and functionalities for specific applications. It enables precise control over electronic, mechanical, optical, and structural characteristics, thereby advancing the development of next-generation functional devices and technologies.…”

Section: Atomic Engineeringmentioning

confidence: 99%

Atomic engineering of two-dimensional materials via liquid metals

Li,

Zhang,

Geng

et al. 2024

Chem. Soc. Rev.

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Continuous orientated growth of scaled single-crystal 2D monolayer films

Abstract: Recent advances in growing scaled 2D single-crystal monolayer films by the chemical vapor deposition method are comprehensively presented.

Cited by 5 publications

References 133 publications

Growth at high substrate coverage can decrease the grain boundary roughness of 2D materials

Growth at high substrate coverage can decrease the grain boundary roughness of 2D materials

Formation of smoother grain boundaries in 2D materials using high deposition rates during the last stages of growth

Atomic engineering of two-dimensional materials via liquid metals

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