2022
DOI: 10.1002/adfm.202204235
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Continuous Liquid Metal Printed 2D Transparent Conductive Oxide Superlattices

Abstract: 2D conducting metal oxides offer unprecedented control of thin film electrostatics at the nanoscale. A scalable, rapid, and low‐cost approach is presented to printing transparent conductive oxides (TCOs) via spontaneous low‐temperature Cabrera‐Mott oxidation of compliant liquid metals. Repeating heterostructures of these 2D oxide layers are exploited to produce an exceptional, 100× increase in conductivity while simultaneously raising the visible range optical transmittance. This innovative approach employs de… Show more

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Cited by 18 publications
(20 citation statements)
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References 51 publications
(60 reference statements)
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“…15,16,18,24−26 In our recent work (Ye et al), we applied this effect to increase carrier concentration (>10 20 cm −3 ) and conductivity (>600 S/cm) through the fabrication of a layered InO x /GaO x superlattice using continuous liquid metal printing (CLMP). 18 However, the electrostatic control offered by these heterointerfaces can also be utilized for improving InO x TFT performance through enhancement of the free carrier concentration, as shown previously for InO x /ZnO x heterojunctions. 15,24 A remaining challenge for heterostructure TFTs is capturing the advantages of higher mobility while controlling the turn on (V on ) voltage toward the goal of enhancement mode operation.…”
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confidence: 91%
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“…15,16,18,24−26 In our recent work (Ye et al), we applied this effect to increase carrier concentration (>10 20 cm −3 ) and conductivity (>600 S/cm) through the fabrication of a layered InO x /GaO x superlattice using continuous liquid metal printing (CLMP). 18 However, the electrostatic control offered by these heterointerfaces can also be utilized for improving InO x TFT performance through enhancement of the free carrier concentration, as shown previously for InO x /ZnO x heterojunctions. 15,24 A remaining challenge for heterostructure TFTs is capturing the advantages of higher mobility while controlling the turn on (V on ) voltage toward the goal of enhancement mode operation.…”
mentioning
confidence: 91%
“…23−25 Heterostructure channels integrating layers with dissimilar work functions can also result in band bending due to Fermi level pinning at the heterointerface. 24 This phenomenon, referred to as modulation doping, 18,24,26 has been utilized to increase the carrier concentration in heterojunctions between InO x , SnO x , ZnO x , AlO x , and GaO x . 15,16,18,24−26 In our recent work (Ye et al), we applied this effect to increase carrier concentration (>10 20 cm −3 ) and conductivity (>600 S/cm) through the fabrication of a layered InO x /GaO x superlattice using continuous liquid metal printing (CLMP).…”
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confidence: 99%
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“…9 Liquid metals offer unique bulk chemistry and interfacial properties due to the adjustable composition achieved by selective alloying, hence providing a high degree of interfacial physicochemical tunability. 10 In addition, liquid metals have more accessible delocalized metal atoms and electrons for catalysis and chemical reactions than their solid counterparts. [11][12][13][14][15][16] Therefore, using metals in their liquid state, enables efficient liquid interface reactions, which provides tremendous opportunities in chemical synthesis.…”
Section: Introductionmentioning
confidence: 99%