Continuous Broadband GaAs and GaN MMIC Phase Shifters

Robinson, Megan; Danielson, Paige; Popović, Zoya

doi:10.1109/lmwc.2021.3115411

Cited by 11 publications

(7 citation statements)

References 16 publications

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“…It is well known that the off-state capacitance of a switch FET is tunable by controlling the gate bias voltage. We can find that a similar approach has been adopted for X- and W-band GaN reflective-type phase shifter MMICs [ 17 , 18 , 19 ]. The reflective-type phase shifter simply adopts a tunable reactive component to tune the phase over a wide tuning range.…”

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

“…The reflective-type phase shifter simply adopts a tunable reactive component to tune the phase over a wide tuning range. In [ 17 , 18 , 19 ], we can find that they employ an off-state FET as a variable reactive load to tune the phase over 70° to 165°. However, they do not apply the technique for the fine phase calibration to reduce the phase error like this work.…”

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

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A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

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A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

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Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

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“…Loaded line type and switched line type, which can be cascaded two to three orders to constitute small step phase shifters, have low IL, yet with narrow working bandwidth [22]. The reflection type PS can achieve multioctave bandwidth, but usually require relatively large-size broadband circulators or directional couplers in X/Ku-band [23,24]. High/low pass type PS can achieve wider bandwidth, but occupy large areas [25].…”

Section: Commonmentioning

confidence: 99%

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

Zhao

Tang²,

Chu³

et al. 2023

IEICE Electron. Express

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This paper presents an 11-15 GHz MMIC multifunction chip (MFC) with phase and amplitude control. The chip is based on the commonleg structure and comprises a phase shifter (PS), attenuator (ATT), T/R switch, gain compensation amplifiers (AMPs), driver stage AMPs and parallel control circuits. In the 11-15 GHz bandwidth, measurements show that the gain and saturation power (Psat) are higher than 21.5 dB and 26.5 dBm, while the efficiency is more than 30% in TX mode. In RX mode, the small signal gain is more than 10.2 dB, the NF is less than 9.8 dB, and output 1 dB power (OP1dB) is more than 8.5 dBm. The measured minimum RMS phase and amplitude errors are 1.7°and 0.45 dB, respectively.

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“…GaN-on-SiC HEMT technology is popular due to its good thermal properties. There are some papers published on GaN-based amplitude and phase control circuits, such as one detailing a phase shifter and an attenuator for high-power and wideband applications [ 1 ]. Phased array antennas using the CMOS process are attracting great interest because CMOS technology can enable low size, weight, power, and cost (SWaP-C) phased array antennas for wireless communication applications [ 2 , 3 , 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology

Kim,

Baek

2023

Sensors

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This paper presents a wideband 4-bit true time delay IC using a 0.25 μm GaN HEMT (High-Electron-Mobility Transistor) process for the beam-squint-free phased array antennas. The true time delay IC is implemented with a switched path circuit topology using DPDT (Double Pole Double Throw) with no shunt transistor in the inter-stages to improve the bandwidth and SPDT (Single Pole Single Throw) switches at the input and the output ports. The delay lines are implemented with CLC π-networks with the lumped element to ensure a compact chip size. A negative voltage generator and an SPI controller are implemented in the PCB (Printed Circuit Board) due to the lack of digital control logic in GaN technology. A maximum time delay of ~182 ps with a time delay resolution of 10.5 ps is achieved at DC–6 GHz. The RMS (Root Mean Square) time delay and amplitude error are <5 ps and <0.6 dB, respectively. The measured insertion loss is <6.8 dB and the input and output return losses are >10 dB at DC–6 GHz. The current consumption is nearly zero with a 3.3 V supply. The chip size including pads is 2.45 × 1.75 mm2. To the authors’ knowledge, this is the first demonstration of a true time delay IC using GaN HEMT technology.

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Continuous Broadband GaAs and GaN MMIC Phase Shifters

Cited by 11 publications

References 16 publications

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

An 11-15GHz multifunctional MMIC with 1.7° RMS phase error, 26.5dBm P<sub>sat</sub> and >30% PAE for T/R module

A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology

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