Continuous anti-Stokes Raman lasers in a He-Ne laser discharge

Rittner, K.; Hope, Anthony P.; Muller-Wirts, T.; Wellegehausen, B.

doi:10.1109/3.119533

Cited by 9 publications

(5 citation statements)

References 19 publications

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“…Therefore, in integrated devices, the intensity of the SARS emission is usually several orders of magnitude weaker than that of SRS [19,20]. In previous works, one successful approach to generate SARS is to use a very high power laser, increasing the number of photons available for SARS [21][22][23][24]. Additionally, efforts developing nanomaterials that can generate Anti-Stokes emissions have been rapidly progressing [25].…”

Section: Introductionmentioning

confidence: 99%

Low threshold anti-Stokes Raman laser on-chip

Choi

Chen

et al. 2019

Photon. Res.

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Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices leverage their ultra-high quality factors (Q), allowing sub-mW stimulated Raman scattering (SRS) lasing thresholds to be achieved. A closely related nonlinear behavior to SRS is stimulated anti-Stokes Raman scattering (SARS). This nonlinear optical process combines the pump photon with the SRS photon to generate an upconverted photon. Therefore, in order to achieve SARS, the efficiency of the SRS process must be high. As a result, achieving SARS in on-chip resonant cavities has been challenging due to the low lasing efficiencies of these devices. In the present work, metal-doped ultra-high Q (Q>10 7 ) silica microcavity arrays are fabricated on-chip. The metaldopant plays multiple roles in improving the device performance. It increases the Raman gain of the cavity material, and it decreases the optical mode area, thus increasing the circulating intensity. As a result, these devices have SRS lasing efficiencies that are over 10x larger than conventional silica microcavities while maintaining low lasing thresholds. This combination enables SARS to be generated with sub-mW input powers and significantly improved anti-Stokes Raman lasing efficiency.

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Section: Introductionmentioning

confidence: 99%

Low threshold anti-Stokes Raman laser on-chip

Choi

Chen

et al. 2019

Photon. Res.

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“…Despite the parameters of metastable level 3d 2 P 3/2 are not optimal (radiative lifetime of about 30 ns [5,6] is comparable with lifetimes of 4p-levels involved in laser transitions), the conversion efficiency appeared comparatively high (> 50%). In particular, it was much higher than that in CW Raman lasers on atomic gases [3,4]. In the present paper, we study factors that can enhance output parameters of a Raman laser based on ions in a gas discharge plasma.…”

Section: Introductionmentioning

confidence: 92%

“…Last years there is active development of CW anti-Stokes Raman lasers (ASRL) with frequency up-conversion that use two-photon inversion in active media of known lasers with gas-discharge excitation. CW generation of the ASRL was successfully achieved for the media of argon-ion [2], He-Ne [3] lasers and heavier noble atoms in electric discharge [4].…”

Section: Introductionmentioning

confidence: 99%

Giant Coulomb broadening and Raman lasing in ionic transitions

et al. 1997

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Continuous-wave generation of an anti-Stokes Raman laser on a number of blue-green argon-ion lines ͑4p-4s and 4p-3d) has been demonstrated with optical pumping from metastable levels 3dЈ 2 G and 3d 4 F. It is found that the population transfer rate is increased by a factor of 3-5 ͑and hence the output power of the Raman laser͒ owing to Coulomb diffusion in the velocity space. The excitation and relaxation rates for the metastable level have been measured. The Bennett hole on the metastable level has been recorded using the probe field technique. It has been shown that Coulomb diffusion changes the shape of the contour to an exponential cusplike profile. Its width exceeds the Lorentzian one by 100 times and is close to the Doppler width. Such a giant broadening is also confirmed by the shape of the absorption saturation curve.

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“…Notice, that in spite of the fact that our results were obtained using the classical description of orientation states of the angular momentum (J 1), they remain valid qualitatively for small J too. For instance, for the three-level system 1s 3 -2p 7 -1s 4 in neon, which was employed in [7] for creation of a Raman laser (the linearly polarized pump wave was resonant to the 1s 3 -2p 7 transition ( nm = 1), and the Raman wave was generated on the 2p 7 -1s 4 transition ( nm = 0)), the gain was higher for the Raman wave with the polarization orthogonal to the pump wave than for the Raman wave with the same polarization as that of the pump wave. This result is in agreement with our result obtained for the above-mentioned optical transition types and can also be proved on the basis of the quantum-mechanical expression (14).…”

Section: Stimulated Raman Scatteringmentioning

confidence: 99%

Polarization properties of multiphoton processes in quantum systems with large angular momentum

Apolonsky¹,

Nasyrov²,

Шалагин³

1999

J. Phys. B: At. Mol. Opt. Phys.

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We generalize an approach (previously proposed by two of the authors) to describe quantum systems with large angular momentum exposed to a radiation field. The approach exploits a transformation from the quantum-mechanical description to the classical one with respect to angular momentum orientation. The transformation is carried out through a density matrix representation similar to the well known Wigner representation for the translational degrees of freedom. The generalization opens up the possibility of describing the interaction of polychromatic radiation (i.e. a set of monochromatic components) with a quantum system when the spectral components of the radiation are resonant to different transitions of the system. It follows naturally from the obtained equations that if the solution of the problem within the framework of the model of nondegenerate states is known, then its generalization for the case of state degeneracy and accounting for polarization of interacting fields is given by the simplest operation. As an example, the proposed method is applied to stimulated Raman scattering and four-wave mixing. We pay special attention to those polarization features which, on the one hand, are interesting to experimentalists and, on the other hand, have not yet been given an adequate explanation in the literature.

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Continuous anti-Stokes Raman lasers in a He-Ne laser discharge

Cited by 9 publications

References 19 publications

Low threshold anti-Stokes Raman laser on-chip

Low threshold anti-Stokes Raman laser on-chip

Giant Coulomb broadening and Raman lasing in ionic transitions

Polarization properties of multiphoton processes in quantum systems with large angular momentum

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