Continuous and fast magneto-ionic control of magnetism in Ta/Co/BiFeO3/SrRuO3 multiferroic heterostructure

Chen, Zhiwei; Sun, Haoyang; Zhou, Xiang; Duan, Hengli; Yan, Wensheng; Yin, Yuewei; Li, Xiaoguang

doi:10.1016/j.jmat.2022.06.005

Cited by 6 publications

(1 citation statement)

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“…In our previous work, SS as low as 0.76 mV/dec and even SS = 0 mV/dec have been obtained in FeFETs based on perovskite BiFeO 3 ferroelectric films . However, conventional perovskite ferroelectric materials are limited by their poor compatibility with CMOS processing. − Additionally, the BiFeO 3 -based FeFETs require an additional inverse voltage to turn off due to the large hysteresis. Therefore, optimizing the structure to achieve FeFET devices with CMOS-compatible HfO 2 -based ferroelectric materials, self-turn-off ability, and ultralow SS is more conducive to practical applications.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Wang,

Liu,

Luo

et al. 2023

ACS Appl. Mater. Interfaces

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The emergence of complementary metal−oxide semiconductor (CMOS)-compatible HfO 2 -based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal−oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO 2 -based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.

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Section: Introductionmentioning

confidence: 99%

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Wang,

Liu,

Luo

et al. 2023

ACS Appl. Mater. Interfaces

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Electronic, Magnetic, and Ferroelectric Properties of Bi0.9La0.1Fe0.9Mn0.1O3/La0.8Sr0.2MnO3: Experimental and First-Principles Calculations Studies

Ait Tamerd,

Marjaoui,

Zanouni

et al. 2023

J. Electron. Mater.

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Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration

Zhu,

Zhao,

Wang

et al. 2024

Rare Met.

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Continuous and fast magneto-ionic control of magnetism in Ta/Co/BiFeO3/SrRuO3 multiferroic heterostructure

Cited by 6 publications

References 57 publications

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Electronic, Magnetic, and Ferroelectric Properties of Bi0.9La0.1Fe0.9Mn0.1O3/La0.8Sr0.2MnO3: Experimental and First-Principles Calculations Studies

Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration

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Continuous and fast magneto-ionic control of magnetism in Ta/Co/BiFeO3/SrRuO3 multiferroic heterostructure

Cited by 6 publications

References 57 publications

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

Electronic, Magnetic, and Ferroelectric Properties of Bi0.9La0.1Fe0.9Mn0.1O3/La0.8Sr0.2MnO3: Experimental and First-Principles Calculations Studies

Three types of resistive switching in ferroelectric Hf0.5Zr0.5O2 films mediated by polarization reversal and oxygen vacancy migration

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Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf_0.5Zr_0.5O₂ Thin Films