Continuous and Discontinuous Semiconductor-Metal Transition in Samarium Monochalcogenides Under Pressure

Jayaraman, A.; Narayanamurti, V.; Bücher, E.; Maines, R. G.

doi:10.1103/physrevlett.25.1430

Cited by 447 publications

(169 citation statements)

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“…An apparently continuous transition of the film was seen for both of the optical measurements (figures 4 and 5), with the metallic layer switching to the semiconducting phase between 350 and 700 K. Although no earlier quantitative experiments exist on the continuous or discontinuous nature of the metal to semiconductor phase transition in thin films, all earlier work has reported a discontinuous phase transition in both directions for the change in resistivity [1] and reflectivity [2] of SmS single crystals under hydrostatic pressure.…”

Section: The Thermally Induced Phase Transitionmentioning

confidence: 83%

“…The result is that the material undergoes a discontinuous isostructural transition to a golden, metallic phase with trivalent Sm. When the pressure is released from a sample under hydrostatic pressure, a hysteretic discontinuous return to the semiconducting phase is observed [1,2]. Pressure induced switching from a semiconducting to a metallic state has also been observed in SmS thin films.…”

Section: Introductionmentioning

confidence: 99%

“…The reversible semiconductor to metallic phase transition of samarium monosulfide (SmS) has been observed many times [1][2][3][4][5][6][7][8][9]. The discontinuous pressure induced transition from a semiconducting to a metallic phase occurs under a relatively low 6.5 kbar of hydrostatic pressure.…”

Section: Introductionmentioning

confidence: 99%

“…The discontinuous pressure induced transition from a semiconducting to a metallic phase occurs under a relatively low 6.5 kbar of hydrostatic pressure. This transition is then reversible upon the reduction of pressure to below 1-1.5 kbar [1,2]. Under ambient conditions SmS is a black (green in some thin films) semiconductor with a NaCl (rock salt) structure [10] with divalent Sm ions.…”

Section: Introductionmentioning

confidence: 99%

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The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

Rogers

Smet

Dorenbos

et al. 2009

J. Phys.: Condens. Matter

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High quality phase pure samarium monosulfide (SmS) thin films were prepared by electron beam evaporation using a samarium metal source in a H 2 S atmosphere. The optical properties (reflection, transmission, absorption) of the films in the semiconducting and metallic phase were analysed from the UV to the mid-IR and explained in terms of the electronic structure of SmS. In this paper it will be shown that metallic SmS thin films exhibit an apparently continuous thermally induced metallic to semiconducting phase transition when studied optically. Temperature dependent x-ray diffraction measurements, however, indicate that the metallic to semiconductor phase transition is in fact first order at a single grain level. The apparently continuous optical behaviour is therefore due to the polycrystalline nature of the films.

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Section: The Thermally Induced Phase Transitionmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

Rogers

Smet

Dorenbos

et al. 2009

J. Phys.: Condens. Matter

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“…A wellknown example of this behavior is SmS, in which the divalent "black" phase is dramatically transformed into a semiconducting intermediate valent "gold" phase by the application of a very modest pressure of 0.6 GPa [21]. As pressure increases, Sm becomes fully trivalent and it magnetically orders [22][23][24].…”

mentioning

confidence: 99%

Pressure-Resistant Intermediate Valence in the Kondo InsulatorSmB6

et al. 2016

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Resonant x-ray emission spectroscopy (RXES) was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f-occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. Over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.

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Magneto‐Optical Properties of Metals, Alloys and Compounds

Schoenes

2006

Materials Science and Technology

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Continuous and Discontinuous Semiconductor-Metal Transition in Samarium Monochalcogenides Under Pressure

Cited by 447 publications

References 3 publications

The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

Pressure-Resistant Intermediate Valence in the Kondo InsulatorSmB6

Magneto‐Optical Properties of Metals, Alloys and Compounds

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