Continuity of Graphene on Polycrystalline Copper

Rasool, Haider I.; Song, Emil B.; Allen, Matthew J.; Wassei, Jonathan K.; Kaner, Richard B.; Wang, Kang L.; Weiller, Bruce H.; Gimzewski, James K.

doi:10.1021/nl1036403

Cited by 177 publications

(186 citation statements)

References 32 publications

(56 reference statements)

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“…Copper with a 100 orientation can produce a distinctive linear moirépattern in overlying graphene. 47,48 In characterization experiments of the SLG−poly Cu substrates, we identified a linear moireṕ attern similar to that previously observed on single-crystal Cu(100). We also find a second coexisting moirépattern oriented nearly perpendicular to the first.…”

Section: Resultssupporting

confidence: 78%

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

et al. 2015

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The behavior of small molecules on a surface depends critically on both molecule−substrate and intermolecular interactions. We present here a detailed comparative investigation of 1,3,5-benzene tricarboxylic acid (trimesic acid, TMA) on two different surfaces: highly oriented pyrolytic graphite (HOPG) and single-layer graphene (SLG) grown on a polycrystalline Cu foil. On the basis of high-resolution scanning tunnelling microscopy (STM) images, we show that the epitaxy matrix for the hexagonal TMA chicken wire phase is identical on these two surfaces, and, using density functional theory (DFT) with a non-local van der Waals correlation contribution, we identify the most energetically favorable adsorption geometries. Simulated STM images based on these calculations suggest that the TMA lattice can stably adsorb on sites other than those identified to maximize binding interactions with the substrate. This is consistent with our net energy calculations that suggest that intermolecular interactions (TMA−TMA dimer bonding) are dominant over TMA−substrate interactions in stabilizing the system. STM images demonstrate the robustness of the TMA films on SLG, where the molecular network extends across the variable topography of the SLG substrates and remains intact after rinsing and drying the films. These results help to elucidate molecular behavior on SLG and suggest significant similarities between adsorption on HOPG and SLG.

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Section: Resultssupporting

confidence: 78%

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

et al. 2015

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“…1(c)). This phenomenon is consistent with that previously observed 20 and can be attributed to the weak affinity between copper and carbon due to the extremely low carbon solubility (<0.008 wt.% at 1084…”

Section: Resultssupporting

confidence: 93%

Step driven competitive epitaxial and self-limited growth of graphene on copper surface

Fan

et al. 2011

AIP Advances

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The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible

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“…atomic steps and vertices), surface defects (e.g. dislocations and atomic protrusions) [10,11] and even amorphous regions on Cu [12]. These results present additional evidence to support that the interaction between graphene and Cu surface is weak.…”

Section: Correlation Between Graphene Growth and Surface Morphology Osupporting

confidence: 52%

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

Ren

Dong

et al. 2012

Chin. Sci. Bull.

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Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of graphene in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders. Graphene, a novel two-dimensional crystal, holds great promise in a wide range of applications such as electronics, transparent electrodes, energy storage, and functional composites due to its excellent properties such as giant carrier mobility, superior thermal conductivity, high transparency and good chemical stability [1,2]. Among all the developed synthesis methods, chemical vapor deposition (CVD) has been attracting increased interests for growing large-area highquality graphene film. In 2009, Li et al.[3] first realized the CVD growth of centimeter-sized graphene films dominated by monolayers (about 95%) by using polycrystalline copper (Cu) foil as a substrate. These graphene films show high quality with a carrier mobility up to 4050 cm 2 V 1 s 1 . In contrast to the CVD growth of graphene on nickel (Ni), which follows a carbon segregation/precipitation mechanism, graphene grown on Cu is superior in both the controllability and uniformity of the number of layers due to the self-limiting surface adsorption growth mechanism [4]. Moreover, it has a great potential to grow very large films.For example, Bae et al. [5] have realized the roll-to-toll production of 30 inch monolayer predominated graphene films. However, there is a large variation in the quality of graphene on Cu prepared by different groups with the carrier mobility varying from several hundreds to several thousands of cm 2 V 1 s 1 . These values are far below the theoretical limit (~10 6 cm 2 V 1 s 1 ), and merely comparable to those of the commercial silicon materials. Meanwhile, it is necessary to develop the CVD process for growing highquality few-and multi-layer graphene since monolayer graphene is unable to satisfy the requirements of certain applications. In addition, it still remains a great challenge to realize the nondestructive and efficient transfer of large-area high-quality CVD grown graphene. Extensive efforts have been devoted to addressing the above issues in the past two years. In this paper, we will first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on Cu, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth

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Continuity of Graphene on Polycrystalline Copper

Cited by 177 publications

References 32 publications

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

Step driven competitive epitaxial and self-limited growth of graphene on copper surface

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

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