Context dependent effects on LF (1/f) noise in advanced CMOS devices

Abstract

The dependence of low frequency (1/f) noise on the proximity of adjacent features within an integrated circuit is investigated. Context layout effects of LOD (Length of gate Oxide Definition), Active to Active Spacing, and DSL (Dual Stress Liners) boundary are studied and explained using mobility and number fluctuation theory. Recommendations to reduce 1/f noise are provided.

An Artificial Neutral Network Chip Based on Two-Dimensional Semiconductor

“…Thus, for TMDs with a relatively large bandgap like MoS2, a device with low leakage current can have a lower data refresh rate, and less energy would be required for information storage than in CMOS devices, such as in dynamic random-access memory (DRAM). Experimental results also suggest that MoS2 transistors show less 1/f noise than Si devices fabricated with the CMOS process [57][58][59] .…”