Contamination of TiO2 thin films spin coated on borosilicate and rutile substrates

Kabir, Imrana I.; Sheppard, L. R.; Shamiri, R.; Koshy, Pramod; Liu, R.; Joe, William; Le, Anh Huy Tuan; Lü, Xinxin; Chen, Wen-Fan; Sorrell, Charles Christopher

doi:10.1007/s10853-019-04282-1

Cited by 16 publications

(15 citation statements)

References 91 publications

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“…The optical density is given as OD = ad. 24,25 Figure 7 represents the dependence of the optical density upon the photon energy for the TiO 2 /Cu/TiO 2 multilayer films. The OD increases with increasing the photon energy and the thickness of the Cu metallic interlayer.…”

Section: Optical Absorption Studiesmentioning

confidence: 99%

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

El-Moula

El-Hossary

Raaif

et al. 2021

Journal of Elec Materi

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The effect of interference on the optoelectronic properties of TiO 2 /Cu/TiO 2 multilayers deposited by DC pulsed magnetron sputtering was scrutinized. The TCT multilayers were arranged with different thicknesses of the Cu metallic interlayer. The outcomes revealed that the band gap energy of TiO 2 / Cu/TiO 2 multilayers decreased with increasing Cu metallic interlayer thickness. The E g value for TiO 2 single layer recorded 3.49 eV and decreased to a value of 3.12 eV for the multilayer film deposited with a 30-nm Cu metallic interlayer. Moreover, the optical conductivity increased as the Cu interlayer thickness increased. Transmittance plots with reasonable numbers of interference fringes were employed to calculate the refractive index of the examined multilayers. The results indicated that the values of n gradually increased with increasing the Cu metallic interlayer thickness. The dispersion energy E d and the single-oscillator energy E o were determined using a WDD single oscillator model.

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Section: Optical Absorption Studiesmentioning

confidence: 99%

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

El-Moula

El-Hossary

Raaif

et al. 2021

Journal of Elec Materi

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show abstract

“…At increased temperatures (~500 • C), amorphous TiO 2 transforms to crystalline anatase, and at temperatures higher than about ~700 • C to 800 • C, to rutile phase. The transformation to rutile phase is irreversible, and the melting point of TiO 2 is 1858 • C [8,14,15]. Furthermore, the currently known methods to crystallize amorphous TiO 2 films into anatase or rutile phases require the annealing step, including oxygen plasma treatment [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Effect of Target Sintering Temperature on the Morphological and Optical Properties of Pulsed Laser Deposited TiO2 Thin Films

et al. 2021

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In this paper, we report on the effect of titanium dioxide (TiO2) target sintering temperature on the morphological and optical properties of amorphous titanium dioxide thin films synthesized by pulsed laser deposition (PLD) on indium tin oxide (ITO) glass substrate and subsequently heat-treated in air at low temperature (150 °C). Three types of targets were used, unsintered (pressed at room temperature), sintered at 500 °C and sintered at 1000 °C. The surface morphology of the samples was investigated by scanning electron microscopy (SEM), and profilometry was used for thickness measurements. The structural properties of the films were examined by X-ray diffraction (XRD), while their optical properties were studied by UV‒vis spectroscopy. The obtained TiO2 thin films have an amorphous nature, as shown by XRD analysis. Profilometer showed that sintered target samples have more reliable thicknesses than unsintered ones. The SEM studies revealed the sufficient structural homogeneity of sintered target nanosized TiO2 films and agglomerates in the case of unsintered target film. The UV‒vis transmittance spectra showed high transparency in the visible range of PLD films, proportional to the target sintering temperature. The optical band gaps of the films deposited using the 500 °C and 1000 °C sintered targets are closer to those of anatase and rutile phases, respectively, which provides a promising approach to the challenges of amorphous TiO2-based nanostructures.

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“…The authors of [1] wish to state explicitly that all of the data for the rutile thin films deposited on (001) oriented rutile substrates are for a single control sample and have been included in this article solely for the purpose of comparative assessment. All of the rutile data have been published in the preceding publications [2] and [3].…”

mentioning

confidence: 99%

Correction to: Contamination of TiO2 thin films spin coated on rutile and soda–lime–silica substrates

et al. 2021

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Contamination of TiO2 thin films spin coated on borosilicate and rutile substrates

Cited by 16 publications

References 91 publications

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

Effect of Cu Metallic Interlayer Thickness on Optoelectronic Properties of TiO2-Based Multilayers Deposited by DC Pulsed Magnetron Sputtering

Effect of Target Sintering Temperature on the Morphological and Optical Properties of Pulsed Laser Deposited TiO2 Thin Films

Correction to: Contamination of TiO2 thin films spin coated on rutile and soda–lime–silica substrates

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