2021
DOI: 10.1002/admi.202101121
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Contamination‐Assisted Rather Than Metal Catalyst‐Free Bottom‐Up Growth of Silicon Nanowires

Abstract: Well‐established metal‐catalyzed vapor–liquid–solid (VLS) growth represents still undoubtedly the key technology for bottom‐up synthesis of single‐crystalline silicon nanowires (SiNWs). Although various SiNW applications are demonstrated, electrical and optical properties are exposed to the inherent risk of electronic deep trap state formation by metal impurities. Therefore, metal catalyst‐free growth strategies are intriguing. The oxid‐assisted SiNW synthesis is explored and it is shown that contamination con… Show more

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“…All of the listed and related sources delivered indiscriminately into the reaction area for the formation of NWs are, in reality, growth process contaminants. For instance, [51] demonstrated that the preparation of silicon wafers with potassium hydroxide results in the unintended formation of many NWs due to the presence of Fe contaminating particles. It is also known that native NWs can grow on porous substrates, in human kidneys, plant cells, etc.…”
Section: The Motion Of the Catalyst Drop Substancementioning
confidence: 99%
“…All of the listed and related sources delivered indiscriminately into the reaction area for the formation of NWs are, in reality, growth process contaminants. For instance, [51] demonstrated that the preparation of silicon wafers with potassium hydroxide results in the unintended formation of many NWs due to the presence of Fe contaminating particles. It is also known that native NWs can grow on porous substrates, in human kidneys, plant cells, etc.…”
Section: The Motion Of the Catalyst Drop Substancementioning
confidence: 99%