Containing the catalyst: diameter controlled Ge nanowire growth

Lotty, Olan; Biswas, Subhajit; Ghoshal, Tandra; Glynn, Colm; O’Dwyer, Colm; Petkov, Nikolay; Morris, Michael A.; Holmes, Justin D.

doi:10.1039/c3tc30846d

Cited by 10 publications

(9 citation statements)

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“…22 Various templating methods, such as anodic aluminium oxide (AAO), silica membranes and metal assisted etching (MAE) have been employed to grow nanowires with thin and uniform diameters. [23][24][25] However releasing nanowires from templates often requires harsh chemical treatments, which also damages the surfaces of the nanowires. Superior control over Si and…”

Section: Introductionmentioning

confidence: 99%

Diameter-Controlled Germanium Nanowires with Lamellar Twinning and Polytypes

et al. 2015

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Type of publicationArticle (peer-reviewed) Link to publisher's versionhttp://pubs.acs.org/journal/cmatex http://dx.doi.org/10.1021/acs.chemmater.5b00697Access to the full text of the published version may require a subscription. are appealing for use in nanowire devices. This paper details the influence of colloidal magnetite iron oxide nanoparticle seeds to regulate the radial dimension and twin boundary formation in Ge nanowires grown through a liquid-injection chemical vapor deposition process. Control over the mean nanowire diameter, even in the sub-10 nm regime, was achieved due to the minimal expansion and aggregation of iron oxide nanoparticles during the growth process. The uncommon occurrence of heterogeneously distributed multiple layer {111} twins, directed perpendicular to the nanowire growth axis, were also observed in <111>-directed Ge nanowires, especially those synthesized from patterned hemispherical Fe3O4 nanodot catalysts. Consecutive twin planes along <111>-oriented nanowires resulted in a local phase transformation from 3C diamond cubic to hexagonal 4H allotrope. Localized polytypic crystal phase heretostructures were formed along <111>-oriented Ge nanowire using magnetite nanodot catalysts. Rights

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Section: Introductionmentioning

confidence: 99%

Diameter-Controlled Germanium Nanowires with Lamellar Twinning and Polytypes

et al. 2015

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“…[ 159 ] More recently, high density iron oxide nanodot arrays have been utilized for the dual electrochemical sensing of ethanol and hydrogen peroxide. [ 160 ] The above outlined inorganic nanofeature fabrication routes using "activated" BCP templates and straightforward metal-salt inclusion can access ordered arrangements of diverse inorganic materials.…”

Section: Reviewmentioning

confidence: 99%

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application

et al. 2016

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Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.

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“…Ag, which creates relatively shallow energy levels, are of particular interest. The silver has been already used for the growth of different NWs, such as In 2 O 3 [7], Si [8], InSb [9], Ge [10], InAs [11], InP [12], In x Ga 1-x As [13] and GaAs [14]. The metal catalytic droplets can be formed on the semiconductor substrate surface by means of different methods.…”

Section: Introductionmentioning

confidence: 99%