Contacts to Wide-Band-Gap Semiconductors

Porter, Lisa M.; Das, K.; Dong, Yufeng; Melby, Jacob H.; Virshup, Ariel

doi:10.1016/b978-0-44-453153-7.00118-8

Cited by 7 publications

(1 citation statement)

References 229 publications

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“…However, the understanding and control of ZnO/metal contacts still represents a challenge, as shown by the wide range of barrier height values measured for the same metal on a given ZnO surface. This puzzling ZnO behavior exasperates a common phenomenon among wide-gap semiconductors, 3,4 and represents a manifest failure of simplified models that neglect the dependence of the Schottky barrier height (SBH) on the interface details, such as the Schottky-Mott rule, where the Schottky barrier is evaluated as the difference between the metal work function and the semiconductor electron affinity.…”

Section: Introductionmentioning

confidence: 99%

Effect of ultrathin gold on the Ohmic-to-Schottky transition in Al/ZnO contacts: A first-principles investigation

Catellani

Calzolari

Ruini

2014

Journal of Applied Physics

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By using a first principles approach based on Density Functional Theory, we present a study of the manipulation of the Al/ZnO contact, which may be turned from Ohmic to Schottky by simply including an ultrathin Au interlayer at the interface. To understand the rationale behind this contact design, we first characterize the original Al/ZnO interface, which results to be Ohmic, irrespective of the substrate termination and of eventual n-doping. Then, we identify the mechanisms that regulate the contact behavior switch upon gold insertion by highlighting the different charge transfer processes that take place at the interface

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Section: Introductionmentioning

confidence: 99%