Contactless probing of semiconductor dopant profile parameters by ir spectroscopy

Wagner, H. H.; Schaefer, Rolf R.

doi:10.1063/1.326229

Cited by 28 publications

(2 citation statements)

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“…The third term accounts for the dispersion caused by absorption outside the measured spectral range. Since the carrier distribution in the implanted layers could be non-homogenous, [22][23][24][25][26] it is convenient to express Eq. (1) in terms of N and l to investigate the carrier profiles.…”

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confidence: 99%

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

D'Costa

Wang

et al. 2014

Applied Physics Letters

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We have investigated the optical properties of Ge and GeSn alloys implanted with phosphorus ions at 400 °C by spectroscopic ellipsometry from far-infrared to ultraviolet. The dielectric response of heated GeSn implants displays structural and transport properties similar to those of heated Ge implants. The far-infrared dielectric function of as-implanted Ge and GeSn shows the typical free carrier response which can be described by a single Drude oscillator. Bulk Ge-like critical points E1, E1 + Δ1, E0', and E2 are observed in the visible-UV dielectric function of heated Ge and GeSn indicating single crystalline quality of the as-implanted layers. Although the implantation at 400 °C recovers crystallinity in both Ge and GeSn, an annealing step is necessary to enhance the carrier activation.

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confidence: 99%

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

D'Costa

Wang

et al. 2014

Applied Physics Letters

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“…Numerical studies on the Si infrared (IR) optical response have been published since the early era of electronic computers [3]. Experimental IR data of surface-implanted sc-Si has also been available for decades [4], [5]. Experiments on the Si thin films optical properties at the visible (VIS) and the near-IR (NIR) spectra have been published especially for amorphous hydrogenated Si (a-or α-Si:H), with the application in solar cells [6]- [8], and also for poly-Si [7]- [10].…”

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confidence: 99%

Infrared Spectroscopy Study of a Poly-Silicon Film for Optimizing the Boron-Implanting Dose

Tuohiniemi

Blomberg

Gao

2013

J. Microelectromech. Syst.

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An experiment was carried out for recording the infrared transmission between 3 and 16 μm for a free-standing poly-silicon (Si) thin film as a function of the boron-ion implanting. The optical constants were extracted in order to optimize the postdeposition implanting of the membranes in a surface micromachined Fabry-Perot interferometer for the thermal infrared. The free-carrier concentration must not degrade the refractive index n significantly since a high and constant value over the application wavelength range is desired. Moreover, an increase in the extinction coefficient k is detrimental for the interferometer performance. On the other hand, poly-Si electrical conductivity must be doped high enough to avoid static charging and to prevent any layout-dependent distribution of the applied control voltage. We applied the variable-angle transmission spectrometry for recording the data of suspended poly-Si membranes, doped with different levels of implanting dose. The Drude model dispersion formula was exploited for extracting the optical constants n(λ) and k(λ). The optical constants are presented as a function of the dopant concentration and the electrical resistivity.[2012-0292]

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1995

Infrared and Raman Spectroscopy

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Contactless probing of semiconductor dopant profile parameters by ir spectroscopy

Abstract: Quantitative and sensitive profiling of dopants and impurities in semiconductors using sputterinitiated resonance ionization spectroscopy

Cited by 28 publications

References 8 publications

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Towards simultaneous achievement of carrier activation and crystallinity in Ge and GeSn with heated phosphorus ion implantation: An optical study

Infrared Spectroscopy Study of a Poly-Silicon Film for Optimizing the Boron-Implanting Dose

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