Contactless Measurement of Silicon Resistivity in Cylindrical TE01n Mode Cavities

Dmowski, Stanislaw; Křupka, J.; Milewski, A.

doi:10.1109/tim.1980.4314864

Cited by 7 publications

(6 citation statements)

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“…For the second category the sample under test, itself, can create a dielectric resonator. Resonant methods employing cavities [35][36][37][38][39][40][41][42][43][44] and open resonators [45][46][47][48][49][50][51][52] operating at a single, dominant or a higher order well-established mode have been used for measurement of dielectric materials for more than 60 years. In a resonant cavity the electric energy stored in the sample under test is usually small compared to the total electric energy stored in the whole cavity (except re-entrant cavities [43,44]).…”

Section: Resonance Methodsmentioning

confidence: 99%

“…TE 01n mode cavities. Some of the most frequently employed modes are the TE 01n ones that have been used for more than 60 years for measurements of the complex permittivity of disc samples (as shown in figure 8(b)) made of low-loss dielectrics [38][39][40] but also for measurements of conductivity of semiconductors and metals [41,42]. A typical operating frequency range for the TE 01n mode cavities is 8 GHz-40 GHz.…”

Section: Measurements In Resonant Cavitiesmentioning

confidence: 99%

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Frequency domain complex permittivity measurements at microwave frequencies

Křupka

2006

Meas. Sci. Technol.

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333

218

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Overview of frequency domain measurement techniques of the complex permittivity at microwave frequencies is presented. The methods are divided into two categories: resonant and non-resonant ones. In the first category several methods are discussed such as cavity resonator techniques, dielectric resonator techniques, open resonator techniques and resonators for non-destructive testing. The general theory of measurements of different materials in resonant structures is presented showing mathematical background, sources of uncertainties and theoretical and experimental limits. Methods of measurement of anisotropic materials are presented. In the second category, transmission–reflection techniques are overviewed including transmission line cells as well as free-space techniques.

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Section: Resonance Methodsmentioning

confidence: 99%

Section: Measurements In Resonant Cavitiesmentioning

confidence: 99%

Frequency domain complex permittivity measurements at microwave frequencies

Křupka

2006

Meas. Sci. Technol.

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333

218

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“…This occurs when the sample under test is separated from the metal parts of the resonant cavity or transmission line, or if microwave currents flowing in the sample do not have components perpendicular to the sample surface. Specific modes that allow contactless measurements on disc-shaped samples are the TE 0m modes in cylindrical waveguides [23] and the TE 0mn modes in cylindrical resonators [24]. The latter technique is very useful for variable temperature measurements of medium and high resistivity bulk semiconductor samples [25].…”

Section: Microwave Techniquesmentioning

confidence: 99%

“…At the beginning of the semiconductor technology era, semiconductor wafer diameters were small, typically in the range from 25 to 50 mm, and samples of this size could be placed entirely inside a typical cylindrical microwave cavity [24]. However, the wafer size increased over time and became larger than the typical size of these cavities.…”

Section: Microwave Techniquesmentioning

confidence: 99%

Contactless methods of conductivity and sheet resistance measurement for semiconductors, conductors and superconductors

Křupka

2013

Meas. Sci. Technol.

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Contactless methods of conductivity measurement are becoming increasingly important due to the progress being made in materials technology and the development of new materials intended for use in the electronics industry, including graphene, GaN and SiC. Despite the fact that they are conducting materials, some of them, like GaN and SiC, cannot be measured with the conventional four-point probe technique. Contactless measurement techniques offer fast and non-destructive methods to measure such materials. Selection of the appropriate method from the available techniques makes it possible to measure materials over a resistivity range of more than 20 decades, from 10−9 to 1012 Ω cm. This review gives an overview of the history of conductivity measurement, describes contactless measurement methods and discusses the most recent achievements in the field. Direct current, radio frequency, microwave and time domain measurement techniques are discussed in this review paper.

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“…A potential drawback of measuring semiconductors with the split-cylinder cavity is that the wafer makes contact with the metal walls at the cavity's edge. A systematic error due to the loading effects from the metal-semiconductor region cannot be avoided, but by using TE 01p modes with high Q factors, the impact can be minimized [15][16][17]. Effects of this type that potentially load the cavity are contained in the uncertainties of r and tan δ e .…”

Section: The Split-cylinder Cavitymentioning

confidence: 99%